銅基板特性對低壓化學氣相沉積生長 六方氮化硼之影響

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李建裕(Jian-Yu Li) 查詢紙本館藏

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光電科學與工程學系

論文名稱

銅基板特性對低壓化學氣相沉積生長六方氮化硼之影響
(Effects of copper substrate characteristics on hexagonal boron nitride growth by Low Pressure Chemical Vapor deposition)

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至系統瀏覽論文 (2029-2-1以後開放)

摘要(中)

六方氮化硼是一種優良的二維材料，其具有優異的導熱性、絕緣性以及寬能隙的特性。因為有二維材料中少數的高絕緣性，因此若能將高品質六方氮化硼轉印至二維半導體材料與傳統介電材料之間，就能改善懸鍵所導致的缺陷進而提升電子元件電性。
目前生長六方氮化硼薄膜大多以化學氣相沉積法於銅箔上，不過六方氮化硼的結晶品質跟銅基板的表面特性有很大的相關性，因此本研究藉由比較銅箔與濺鍍銅膜基板特性對低壓化學氣相沉積生長六方氮化硼的差異。
在本論文中分為銅箔基板以及銅膜基板兩個部分進行討論，銅箔基板部分探討退火參數對表面之影響，再探討不同前驅物量、氬氣流量、前驅物溫度以及基板是否通氫退火對六方氮化硼生長之影響。銅膜基板部分探討濺鍍參數對銅膜之影響，再探討不同藍寶石基板前處理方式對銅膜及六方氮化硼生長之影響。
最後本研究發現在相同的六方氮化硼生長條件下時，銅膜基板生長之六方氮化硼結晶比例高於銅箔生長之六方氮化硼結晶比例，表示表面平整且單晶的銅基板能提升六方氮化硼的結晶品質進而生長出高品質六方氮化硼薄膜。

摘要(英)

Hexagonal boron nitride (h-BN) is an excellent two-dimensional material renowned for its exceptional thermal conductivity, insulation properties, and wide bandgap. Among the limited insulating materials of two-dimensional substances, transferring high-quality h-BN between two-dimensional semiconductor materials and traditional dielectric materials holds the potential to improve defects caused by dangling bonds, thereby enhancing the electrical performance of electronic components.
Currently, the growth of h-BN thin films is mainly achieved through chemical vapor deposition on copper foils. However, the crystalline quality of h-BN is closely related to the surface properties of the copper substrate. Consequently, this study aims to investigate the differences in the low pressure chemical vapor deposition growth of h-BN by comparing copper foils with sputtered copper film substrates.
The research is divided into two main sections: the copper foil substrate and the copper film substrate. In the copper foil substrate section, the study explores the influence of annealing parameters on the surface, followed by an investigation into the effects of different precursor amounts, argon flow rates, precursor temperatures, and the substrate with/without hydrogen annealing. In the copper film substrate section, the study in examines the influence of sputtering parameters on the copper film and subsequently investigates the effects of different sapphire substrate pretreatment methods on both the copper film and h-BN growth.
Finally, this study concludes that under identical h-BN growth conditions, the crystalline proportion of h-BN grown on copper film substrates is higher than that grown on copper foils. This indicates that a smooth and single-crystal copper substrate can enhance the crystalline quality of h-BN, thereby facilitating the growth of high-quality h-BN thin films.

關鍵字(中)

★ 六方氮化硼
★ 低壓化學氣相沉積
★ 濺鍍銅膜
★ sp2-氮化硼
★ 二維材料

關鍵字(英)

★ h-BN
★ Hexagonal Boron Nitride
★ LPCVD
★ sputtered copper film
★ sp2-BN
★ 2D materials

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 xii
第一章緒論 1
1-1 研究背景 1
1-2 研究動機 3
第二章六方氮化硼理論 5
2-1 六方氮化硼結構與特性 5
2-2 六方氮化硼的製備方法 9
2-3 硼烷氨分解及六方氮化硼生長機制 22
第三章實驗方法與儀器介紹 25
3-1 實驗方法與架構 25
3-1-1 基板清潔 25
3-1-2 濺鍍原理及濺鍍銅膜實驗步驟 26
3-1-3 LPCVD原理及生長h-BN實驗步驟 28
3-1-4 h-BN轉印方法流程 30
3-2 量測儀器 31
3-2-1 拉曼光譜儀 (Raman spectrometer) 31
3-2-2 紫外-可見光-近紅外分光光譜儀 (UV-VIS-NIR Spectrophotometer) 33
3-2-3 X-射線繞射儀 (X-ray diffractometer, XRD) 34
3-2-4 原子力顯微鏡 (Atomic Force Microscope, AFM) 35
3-2-5 表面輪廓儀 (Alpha-step profile meter) 35
3-2-6 場發射式掃描電子顯微鏡 (Field Emission Scanning Electron Microscope, FE-SEM) 36
3-2-7 背向散射電子繞射技術 (Electron Backscatter Diffraction Analysis, EBSD) 37
3-2-8 高解析雙束型聚焦離子束顯微鏡系統 (High-Resolution Dual-Beam Focus-Ion-Beam System, HR-Dual Beam FIB) 38
3-2-9 高解析掃描穿透式電子顯微鏡 (High Resolution Scanning Transmission Electron microscope, HR-STEM) 39
3-2-10 X-射線光電子能譜 (X-ray Photoelectron Spectroscopy, XPS) 40
3-3 碳汙染排除 42
第四章銅箔基板生長六方氮化硼之結果 47
4-1 銅箔基板退火 47
4-2 六方氮化硼薄膜生長分析 51
4-2-1 前驅物量對六方氮化硼生長之影響 51
4-2-2 氬氣流量對六方氮化硼生長之影響 55
4-2-3 前驅物溫度對六方氮化硼生長之影響 61
4-2-4 通氫退火基板對六方氮化硼生長之影響 66
4-3 六方氮化硼薄膜光學特性分析 69
第五章銅膜基板生長六方氮化硼之結果 71
5-1 銅膜製備 71
5-1-1 不同基板對於銅膜晶相之影響 72
5-1-2 不同功率對於銅膜晶相之影響 73
5-1-3 不同厚度對於銅膜晶相之影響 74
5-2 銅膜退火及六方氮化硼生長分析 77
5-2-1 銅膜退火參數及六方氮化硼生長特性 77
5-2-2 UV Ozone處理藍寶石基板之濺鍍銅膜 82
5-2-3 酸洗藍寶石基板之濺鍍銅膜 85
第六章結論與未來工作 90
6-1 結論 90
6-2 未來工作 92
第七章參考文獻 93

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2024-1-22

推文