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    Showing items 18591-18600 of 80989. (8099 Page(s) Totally)
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    DateTitleAuthors
    2022-08-17 N 倍繞射效率之體積全像多工技術;N Times Enhancement of Diffraction Efficiency of Volume Holographic Multiplexing Technology 關懷明; Kuan, Huai-Ming
    2024-07-23 N 型鎂矽錫之元件測試與模組製作;Study of N-type Mg2(SiSn) Thermoelectric Devices and Modules 郭泳君; Kuo, Yong-Chun
    2002-06-28 n 階置換Cayley 圖之研究 林政寬; Cheng-Kuan Lin
    2002 n(+)-GaN formed by Si implantation into p-GaN Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
    2004 [N(CH2CH2NH3)(3)][U3O2F13]center dot 2H(2)O: A novel organically templated mixed-valent uranium oxyfluoride with a hybrid network structure Wang,CM; Liao,CH; Lin,HM; Lii,KH
    2010 N(epsilon)-Lysine Acetylation of a Bacterial Transcription Factor Inhibits Its DNA-Binding Activity Thao,S; Chen,CS; Zhu,H; Escalante-Semerena,JC
    2014-08-14 N,N,O-蠍狀三牙基配位銅錯合物合成及C−H鍵活化反應研究;Synthesis and Characterization of Copper N,N,O-Scorpionate Complexes and Study of C−H Activation 李佳珊; Li,Jia-shan
    2024-07-18 N-(嘧啶-2-基)二氫吲哚-6-胺衍生物作為抗三陰性乳癌新型抗癌藥物的合成及生物活性研究;Synthesis and Biological Activity Study of N-(Pyrimidin-2-yl)indolin-6-amine Derivatives as Novel Anticancer Agents Against Triple-Negative Breast Cancer Cells 賴盈汝; Lai, Ying-Ju
    2013-08-28 N-GaN表面之六角錐成長機制及其光學特性分析; Growth mechanism of hexagonal pyramid on N-GaN surface by alkali etchant and its optical performance 張祐銜; Chang,You-hsien
    2011-07-25 n-MOSFET元件製程調變之低頻雜訊分析; Low-Frequency Noise Analysis in Process Modification of n-MOSFETs 蔡榮宗; Rong-Zong Tsai
    Showing items 18591-18600 of 80989. (8099 Page(s) Totally)
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