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    顯示項目18876-18900 / 80989. (共3240頁)
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    日期題名作者
    2024-01-25 Nietzsche as Educator in Lars von Trier’s Movies 卡基; Ugurlu, Ahmet Cagri
    2008 Nighttime medium-scale traveling ionospheric disturbances detected by network GPS receivers in Taiwan Lee,C. C.; Liou,Y. A.; Otsuka,Y.; Chu,F. D.; Yeh,T. K.; Hoshinoo,K.; Matunaga,K.
    2002-12-01 NIMA格式圖資應用於任務規劃系統技術研究; Technique Study on NIMA Spatial Data Format for Mission Planning System 李子壩
    2015-07-22 NINJA: A New Android UI State Inference Attack and Defense Mechanism 吳昊澄; Wu,Hao-Cheng
    2018-04-24 NIPAAm水凝膠薄膜熱固化特性研究 魏敬紋; Wei, Jing-Wen
    2015-01-09 NIR DOT光電量測系統於解調校正之研究 李惟宇; Li,Wei-Yu
    1996 The nitridation kinetics of pyrolyzed rice husk Liou,TH; Chang,FW
    2000 The nitridation kinetics of silicon powder compacts Chang,FW; Liou,TH; Tsai,FM
    2009 Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step Kuo,CH; Fu,YK; Yeh,CL; Tun,CJ; Chen,PH; Lai,WC; Chang,SJ
    2003 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
    2010 Nitride-based blue light-emitting diodes with multiple Mg(x)N(y)/GaN buffer layers Fu,YK; Kuo,CH; Tun,CJ; Chang,LC
    2002 Nitride-based cascade near white light-emitting diodes Chen,CH; Chang,SJ; Su,YK; Sheu,JK; Chen,JF; Kuo,CH; Lin,YC
    2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    2004 Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT
    2004 Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
    2005 Nitride-based LEDs with ITO on nanostructured silicon contact layers Kuo,CH; Chang,SJ; Chen,SC
    2004 Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK
    2003 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
    2005 Nitride-based light-emitting diodes with p-AlInGaN surface layers Kuo,CH; Lin,CC; Chang,SJ; Hsu,YP; Tsai,JM; Lai,WC; Wang,PT
    2006 Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures Kuo,C. H.; Kuo,C. W.; Chen,C. M.; Pong,B. J.; Chi,G. C.
    2004 Nitride-based near-ultraviolet LEDs with an ITO transparent contact Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM
    2007 Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN Kuo,C. H.; Feng,H. C.; Kuo,C. W.; Chen,C. M.; Wu,L. W.; Chi,G. C.
    2007 Nitride-based near-ultraviolet mesh MQW light-emitting diodes Kuo,C. H.; Feng,H. C.
    2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    2006 Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications Shi,JW; Huang,HY; Shell,JK; Hsieh,SH; Wu,YS; Lu,JY; Huang,FH; Lai,WC
    顯示項目18876-18900 / 80989. (共3240頁)
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