Cross-interaction study of Cu/Sn/Pd and Ni/Sn/Pd sandwich solder joint structures

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题名:	Cross-interaction study of Cu/Sn/Pd and Ni/Sn/Pd sandwich solder joint structures
作者:	劉正毓;Lu, C. T.;Huang, T.S.;Cheng, C.H.;Tseng, H.W.;Liu, C.Y.
贡献者:	工學院化學工程與材料工程學系
关键词:	Applied sciences;Brazing. Soldering;Characterization and Evaluation of Materials;Chemistry and Materials Science;Condensed matter: structure, mechanical and thermal properties;Copper;Cross-disciplinary physics: materials science;rheology;Diffusion;Diffusion in solids;Electronics;Electronics and Microelectronics;Exact sciences and technology;Flux;Instrumentation;Interface reactions;Interfaces;Joining, thermal cutting: metallurgical aspects;Materials;Materials Science;Metals. Metallurgy;Methods of crystal growth;physics of crystal growth;Nickel;Optical and Electronic Materials;Palladium;Physics;Sandwich structures;Soldering;Solid State Physics;Theory and models of crystal growth;physics of crystal growth, crystal morphology and orientation;Tin;Transport properties of condensed matter (nonelectronic)
日期:	2012-01-01
上传时间:	2026-04-21 13:48:44 (UTC+8)
出版者:	Springer New York;Boston: Springer US
摘要:	摘要： Cross-interactions between Cu/Sn/Pd and Ni/Sn/Pd sandwich structures were investigated in this work. For the Cu/Sn/Pd case, the growth behavior and morphology of the interfacial (Pd,Cu)Sn 4 compound layer was very similar to that of the single Pd/Sn interfacial reaction. This indicates that the growth of the (Pd,Cu)Sn 4 layer at the Sn/Pd interface would not be affected by the opposite Cu/Sn interfacial reaction. We can conclude that there is no cross-interaction effect between the two interfacial reactions in the Cu/Sn/Pd sandwich structure. For the Ni/Sn/Pd case, we observed that: (1) after 300 s of reflow time, the (Pd,Ni)Sn 4 compound heterogeneously nucleated on the Ni 3 Sn 4 compound layer at the Sn/Ni interface; (2) the growth of the interfacial PdSn 4 compound layer was greatly suppressed by the formation of the (Pd,Ni)Sn 4 compound at the Sn/Ni interface. We believe that this suppression of PdSn 4 growth is caused by heterogeneous nucleation of the (Pd,Ni)Sn 4 compound in the Ni 3 Sn 4 compound layer, which decreases the free energy of the entire sandwich reaction system. The difference in the chemical potential of Pd in the PdSn 4 phase at the Pd/Sn interface and in the (Pd,Ni)Sn 4 phase at the Sn/Ni interface is the driving force for the Pd atomic flux across the molten Sn. The diffusion of Ni into the ternary (Pd,Ni)Sn 4 compound layer controls the Pd atomic flux across the molten Sn and the growth of the ternary (Pd,Ni)Sn 4 compound at the Sn/Ni interface. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2012-01 出處： Journal of electronic materials, 2012-01, Vol.41 (1), p.130-137 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2011 版權： 2015 INIST-CNRS 版權： TMS 2012 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-011-1772-0 識別號： CODEN: JECMA5
显示于类别:	[化學工程與材料工程學系 ] 期刊論文

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