摘要： The intermetallic compound SnTe rapidly formed at interfaces between p -type bismuth telluride (Bi 0.5 Sb 1.5 Te 3 ) thermoelectric materials and lead-free solders. The intermetallic compound influences the mechanical properties of the joints and the reliability of the thermoelectric modules. Various lead-free solder alloys, Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-0.7Cu, and Sn-2.5Ag-2Ni, were used to investigate the interfacial reactions. The results thus obtained show that Ag and Cu preferentially diffused into the Te-rich phase in Bi 0.5 Sb 1.5 Te 3 , so layers of Ag-Te and Cu-Te compounds could not form an effective diffusion barrier. Electroless nickel-phosphorus was plated at the interfaces to serve as a diffusion barrier, and the (Cu,Ni) 6 Sn 5 compound formed instead of SnTe. Furthermore, the intermetallic compound NiTe formed between nickel- phosphorus and Bi 0.5 Sb 1.5 Te 3 and also served as a diffusion barrier. A plot of thickness as a function of annealing time yielded the growth kinetics of the intermetallic compounds in the thermoelectric material systems. The activation energy for the growth of the NiTe intermetallic compound is 111 kJ/mol. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2012-01 出處： Journal of electronic materials, 2012-01, Vol.41 (1), p.153-158 資源來源： OmniFile Full Text Select(H.W. Wilson)-EBSCOhost全文資料庫 版權： TMS 2011 版權： 2015 INIST-CNRS 版權： TMS 2012 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-011-1740-8 識別號： CODEN: JECMA5
