Tunable electrical memory characteristics using polyimide: Polycyclic aromatic compound blends on flexible substrates

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题名:	Tunable electrical memory characteristics using polyimide: Polycyclic aromatic compound blends on flexible substrates
作者:	劉振良;Yu, An-Dih;Kurosawa, Tadanori;Chou, Ying-Hsuan;Aoyagi, Koutarou;Shoji, Yu;Higashihara, Tomoya;Ueda, Mitsuru;Liu, Cheng-Liang;Chen, Wen-Chang
贡献者:	工學院化學工程與材料工程學系
关键词:	additives;aluminum;aromatic compounds;computer hardware;durability;electric field;ethylene;memory;polycyclic compounds
日期:	2013-06-12
上传时间:	2026-04-21 14:11:21 (UTC+8)
出版者:	American Chemical Society;United States: American Chemical Society
摘要:	摘要： Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4′-diamino-4″-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronene, the PI(AMTPA):PDI-DO blend based memory devices show a smaller threshold voltage and change the memory behavior in a smaller additive content. Besides, the memory devices fabricated on a flexible PEN substrate exhibit an excellent durability upon the bending conditions. These tunable memory performances of the developed PI/polycyclic aromatic compound blends are advantageous for future advanced memory device applications. 其他題名： ACS Appl. Mater. Interfaces 出版者： United States: American Chemical Society 出版日期： 2013-06-12 出處： ACS Applied Materials & Interfaces, 2013-06, Vol.5 (11), p.4921-4929 資源來源： American Chemical Society Journals 版權： Copyright © 2013 American Chemical Society 識別號： ISSN: 1944-8244 識別號： ISSN: 1944-8252 識別號： EISSN: 1944-8252 識別號： DOI: 10.1021/am4006594 識別號： PMID: 23646879
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