Epitaxial Cu-Sn bulk crystals grown by electric current

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题名:	Epitaxial Cu-Sn bulk crystals grown by electric current
作者:	劉正毓;Liu, C.Y.;Hu, Y.J.;Liu, Y.S.;Tseng, H.W.;Huang, T.S.;Lu, C.T.;Chuang, Y.C.;Cheng, S.L.
贡献者:	工學院化學工程與材料工程學系
关键词:	Applied sciences;Brazing. Soldering;Exact sciences and technology;IC packaging;Intermetallic compounds;Joining, thermal cutting: metallurgical aspects;Liquid-phase epitaxy (LPE);Metals. Metallurgy;Soldering joint
日期:	2013-09-01
上传时间:	2026-04-21 14:13:40 (UTC+8)
出版者:	Elsevier Ltd.;Kidlington: Elsevier Ltd
摘要:	摘要： Epitaxial Cu3Sn and Cu6Sn5 grown by liquid-phase electroepitaxy (LPEE) have been demonstrated in this work. X-ray diffraction analysis reveals that LPEE-grown Cu3Sn and Cu6Sn5 grew in particular directions (planes) with respect to the electron flow. LPEE-grown Cu3Sn grew in the 〈020〉 and 〈400〉 directions, and LPEE-grown Cu6Sn5 grew in the 〈204〉 and 〈623¯〉 directions. With the aid of a molecular simulation software tool, we conclude that the particular growth directions represent the low-resistance paths for electron flow. This means that, along those particular directions in the LPEE-grown Cu–Sn compounds, the traveling electrons would be scattered least by the lattice. Thus, as the electromigrating Cu atoms form Cu–Sn compound, the newly forming Cu–Sn unit cells would orientate themselves in those particular growth directions to facilitate electron flow. Then, the well-oriented newly formed Cu–Sn compound unit cells can incorporate the growth of the highly orientated LPEE-grown Cu–Sn compounds. In addition, the anisotropy of a number of properties of LPEE-grown Cu3Sn and Cu6Sn5, i.e. coefficient of thermal expansion, Vickers microhardness and electrical properties (resistivity, carrier mobility and carrier concentration), along the particular orientations were measured and reported. 出版者： Kidlington: Elsevier Ltd 出版日期： 2013-09-01 出處： Acta materialia, 2013-09, Vol.61 (15), p.5713-5719 版權： 2013 Acta Materialia Inc. 版權： 2014 INIST-CNRS 識別號： ISSN: 1359-6454 識別號： EISSN: 1873-2453 識別號： DOI: 10.1016/j.actamat.2013.06.014
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