中大學術數位典藏-NCU Institutional Repository:Item 987654321/100792
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 94459/94459 (100%)
造访人次 : 87654069      在线人数 : 221
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/100792


    题名: Nonvolatile organic field effect transistor memory devices using one-dimensional aligned electrospun nanofiber channels of semiconducting polymers
    作者: 劉振良;Lin, Yu-Wei;Lin, Chih-Jung;Chou, Ying-Hsuan;Liu, Cheng-Liang;Chang, Hsuan-Chun;Chen, Wen-Chang
    贡献者: 工學院化學工程與材料工程學系
    关键词: Alignment;Channels;Data storage;Electrospinning;Field effect transistors;Memory devices;Nanostructure;Polymers
    日期: 2013-09-14
    上传时间: 2026-04-21 14:14:34 (UTC+8)
    出版者: Royal Society of Chemistry
    摘要: 摘要: We report the nonvolatile memory characteristics of organic field effect transistors (OFETs) using one-dimensional aligned electrospun (ES) nanofibers of semiconducting poly(9,9-dioctyl-fluorene-co-bithiophene) (F8T2). The effects of the nanofiber diameter associated with the polymer chain orientation on the charge transport and storage ability were explored. The OFET devices using the F8T2 ES nanofibers exhibited a large average memory window of similar to 30 V, an on-off ratio of 10 super(2)-10 super(3) and a hole mobility of 10 super(-4) to 10 super(-2) cm super(2) V super(-1) s super(-1). The write, erase and read processes of the memory device were performed by voltages across the nanofiber channels for at least 100 cycles and could be stabilized for at least 1000 s. The reversible hysteresis characteristics were attributed to the shallow trapping in the ordered/disordered domains of the F8T2 nanofibers from the in situgrazing incidence wide angle X-ray scattering (GIWAXS) analysis. Our results suggest that the semiconducting ES nanofibers could have potential applications for high performance OFET-based nonvolatile organic memory devices.
    出版日期: 2013-01-01
    出處: Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (34), p.5336-5343
    資源來源: Royal Society of Chemistry
    識別號: ISSN: 2050-7526
    識別號: EISSN: 2050-7534
    識別號: DOI: 10.1039/c3tc31068j
    显示于类别:[化學工程與材料工程學系 ] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML32检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明