中大學術數位典藏-NCU Institutional Repository:Item 987654321/100878
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 94459/94459 (100%)
造访人次 : 87652291      在线人数 : 247
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/100878


    题名: Nonvolatile organic thin film transistor memory devices based on hybrid nanocomposites of semiconducting polymers: Gold nanoparticles
    作者: 劉振良;Chang, Hsuan-Chun;Liu, Cheng-Liang;Chen, Wen-Chang
    贡献者: 工學院化學工程與材料工程學系
    关键词: carbon;computer hardware;gold;ligands;nanocomposites;nanogold;polymers;trapping
    日期: 2013-12-26
    上传时间: 2026-04-21 14:16:56 (UTC+8)
    出版者: American Chemical Society;United States: American Chemical Society
    摘要: 摘要: We report the facile fabrication and characteristics of organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium. Electrical bias sweep/excitation effectively modulates the current response of hybrid memory devices through the charge transfer between F8T2 channel and functionalized Au NPs trapping sites. The electrical performance of the hybrid memory devices can be effectively controlled though the loading concentrations (0–9 %) of Au NPs and organic thiolate ligands on Au NP surfaces with different carbon chain lengths (Au-L6, Au-L10, and Au-L18). The memory window induced by voltage sweep is considerably increased by the high content of Au NPs or short carbon chain on the ligand. The hybrid nanocomposite of F8T2:9% Au-L6 provides the OTFT memories with a memory window of ∼41 V operated at ±30 V and memory ratio of ∼1 × 103 maintained for 1 × 104 s. The experimental results suggest that the hybrid materials of the functionalized Au NPs in F8T2 matrix have the potential applications for low voltage-driven high performance nonvolatile memory devices.
    其他題名: ACS Appl. Mater. Interfaces
    出版者: United States: American Chemical Society
    出版日期: 2013-12-26
    出處: ACS Applied Materials & Interfaces, 2013-12, Vol.5 (24), p.13180-13187
    資源來源: American Chemical Society Journals
    版權: Copyright © 2013 American Chemical Society
    識別號: ISSN: 1944-8244
    識別號: ISSN: 1944-8252
    識別號: EISSN: 1944-8252
    識別號: DOI: 10.1021/am404187r
    識別號: PMID: 24224739
    显示于类别:[化學工程與材料工程學系 ] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML32检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明