Functionalized benzothieno[3,2 b]thiophenes (BTT s) for high performance organic thin-film transistors (OTFTs)

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题名:	Functionalized benzothieno[3,2 b]thiophenes (BTT s) for high performance organic thin-film transistors (OTFTs)
作者:	陳銘洲;Youn, Jangdae;Huang, Peng-Yi;Zhang, Shiming;Liu, Chiao-Wei;Vegiraju, Sureshraju;Prabakaran, Kumaresan;Stern, Charlotte;Kim, Choongik;Chen, Ming-Chou;Facchetti, Antonio;Marks, Tobin J.
贡献者:	理學院化學學系
关键词:	Derivatives;Devices;Energy gaps (solid state);Molecular structure;Semiconductor devices;Semiconductors;Thin films;Transistors
日期:	2014-09-28
上传时间:	2026-04-21 14:29:13 (UTC+8)
出版者:	Royal Society of Chemistry;Royal Society of Chemistry (RSC)
摘要:	摘要： New benzothieno[3,2-b]thiophene (BTT) derivatives, end-functionalized with biphenyl (Bp-BTT), naphthalenyl (Np-BTT), and benzothieno[3,2-b]thiophenyl (BBTT; dimer of BTT) moieties, were synthesized and characterized for bottom-gate/top-contact organic thin-film transistors (OTFTs). All three materials exhibit good environmental stability as assessed by thermogravimetric analysis, and no decomposition after extended light exposure, due to their wide band gaps and low-lying HOMOs. The single crystal structures of Bp-BTT and BBTT reveal flat molecular geometries, close pi - pi stacking, and short sulfur-to-sulfur distances, suggesting an ideal arrangement for charge transport. X-ray diffraction (XRD) measurements verify that the bulk crystal structures are preserved in the polycrystalline thin films. As a consequence, Bp-BTT and BBTT exhibit good OTFT performance, with mu = 0.34 cm super(2) V super(-1) s super(-1) (max) and I sub(on)/I sub(off) = (3.3 plus or minus 1.6) 10 super(8) for Bp-BTT, and mu = 0.12 cm super(2) V super(-1) s super(-1) (max) and I sub(on)/I sub(off) = (2.4 plus or minus 0.9) 10 super(7) for BBTT; whereas Np-BTT gives lower device performance with mu = 0.055 cm super(2) V super(-1) s super(-1) (max) and I sub(on)/I sub(off) = (6.7 plus or minus 3.4) 10 super(8). In addition, octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) treatment of the SiO sub(2) gate dielectric is found to be effective in enhancing the OTFT performance for all three BTT derivatives, by improving the interfacial semiconductor film morphology and in-plane crystallinity. 出版者： Royal Society of Chemistry (RSC) 出版日期： 2014-01-01 出處： Journal of Materials Chemistry C, 2014-01, Vol.2 (36), p.7599--7607 資源來源： Royal Society of Chemistry 識別號： ISSN: 2050-7526 識別號： EISSN: 2050-7534 識別號： DOI: 10.1039/c4tc01115e
显示于类别:	[化學學系] 期刊論文

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