本論文包括概述濺鍍原理及氧化（鋁）鋅薄膜製作流程，並利用霍爾量測、X光晶格排列繞射量測分析氧化（鋁）鋅層在不同的退火溫度下，量測遷移率、濃度、電阻率等特性。並提出以平臺式(Mesa-type)及重新成長法(Regrowth Method)的製程方法製作完成氧化（鋁）鋅/氮化鎵異質接面雙載子電晶體(AZO(ZnO)/GaN Heterojunction Bipolar Transistors)。量測部份主要包括元件直流特性、成長鈍化層後直流特性，之後對量測結果進行討論和分析。 氧化鋁鋅/氮化鎵異質接面雙載子電晶體量測的射極面積AE= 120×120 μm2在常溫環境下偏壓VBE ＝2 V時的得到電流增益(β)約為120，崩潰電壓大於4伏特。利用重新成長法的電晶體結構，其無蝕刻p-type氮化鎵有較佳的金屬和半導體特性。 最後在附錄內討論活性離子(RIE)乾蝕刻氧化鋅薄膜製程參數之研究，討論各種製程參數對氧化鋅薄膜蝕刻的結果，進而找出較佳的乾蝕刻條件。 Several problems related with GaN-based bipolar transistors result in difficulties to fabricate GaN-based HBTs with good device characteristics. The major problems are the Schottky-like Ohmic contacts on p-GaN and the leakage paths from the threading dislocations (TDs) and dry etching process. Therefore, the research on GaN-based HBTs is still one of the challenging research subjects. The leakage current at the base-collector junction is the major source of the non-ideality in device characteristics. In this thesis, the dependence of carrier concentration, electrical resistivity and Hall mobility of ZnO and AZO films on the annealing temperatures are studied. The as-deposited ZnO film does not show the Hall measurement results due to the high resistivity. But lower resistivity is observed by increasing annealing temperatures. The x-ray scattering intensity profile of a 2θ-ω scan across the (002) reflection of the studied n-ZnO films is examined.We fabricated ZnO/GaN collector-up HBT(Heterojunction Bipolar Transistors), AZO/GaN HBT and AZO/ZnO/GaN HBT with ZnO(AZO) deposited by dc sputtering. The measurement include DC characteristics without passvation and DC characteristics with passvation. AZO/GaN HBT emitter area AE= 120×120 um2 measured Gummel plot shows maximum current gain of ~120 with VBE ＝2 V, and breakdown voltage greater than 4V. The turn-on voltages (at 1μA) of the base-emitter and base-collector junction diodes are 2.45 and 2.25 V.
