Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

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题名:	Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
作者:	賴昆佑;Lai, K. Y.;Paskova, T.;Wheeler, V. D.;Chung, T. Y.;Grenko, J. A.;Johnson, M. A. L.;Udwary, K.;Preble, E. A.;Evans, K. R.
贡献者:	理學院光電科學與工程學系
关键词:	cathodoluminescence;Condensed Matter Physics;Electrical and Electronic Engineering;Electronic, Optical and Magnetic Materials;Materials Chemistry;MOCVD;quantum wells;RSM;Surfaces and Interfaces;Surfaces, Coatings and Films;TEM
日期:	2012-03-01
上传时间:	2026-04-23 11:33:44 (UTC+8)
出版者:	Wiley-VCH Verlag;Berlin: WILEY-VCH Verlag
摘要:	摘要： AbstractInGaN/GaN quantum wells (QWs) grown at identical conditions on m‐plane GaN and c‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with m‐ and c‐plane surface orientations. Cathodoluminescence (CL) spectra of m‐plane QWs revealed shorter wavelength and no blueshift with increasing CL probe current in accordance with previous reports. Relative indium compositions were estimated by high‐resolution X‐ray diffraction to be 5.1 and 13.9% for m‐plane and c‐plane QWs, respectively. Cross‐sectional transmission electron microscopy images revealed that the well widths of the m‐plane QWs were noticeably thicker than those of the c‐plane QWs. The lower indium compositions and thicker well widths of the m‐plane QWs indicated that different indium incorporation and diffusion occurred in the structures grown on the GaN substrate, which is attributed to its surface off‐cut toward [0001] and the higher thermal conductivity with respect to that of sapphire. 其他題名： Phys. Status Solidi A 出版者： Berlin: WILEY-VCH Verlag 出版日期： 2012-03 出處： Physica status solidi. A, Applications and materials science, 2012-03, Vol.209 (3), p.559-564 資源來源： UZH-/ZB-Zugriff: Wiley Journals 版權： Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1862-6300 識別號： EISSN: 1862-6319 識別號： DOI: 10.1002/pssa.201127345
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