Temperature dependence on p-Cu 2 O thin film electrochemically deposited onto copper substrate

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Title:	Temperature dependence on p-Cu 2 O thin film electrochemically deposited onto copper substrate
Authors:	林景崎;Huang, Mao-Chia;Wang, TsingHai;Chang, Wen-Sheng;Lin, Jing-Chie;Wu, Ching-Chen;Chen, I.-Chen;Peng, Kun-Cheng;Lee, Sheng-Wei
Contributors:	工學院材料科學與工程研究所
Keywords:	Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Electrochemical deposition;Electroplating temperature;Exact sciences and technology;p-Cu2O;Photoelectrochemistry;Physics
Date:	2014-05-15
Issue Date:	2026-04-23 11:46:22 (UTC+8)
Publisher:	Elsevier;Amsterdam: Elsevier B.V
Abstract:	摘要： •The p-Cu2O films were prepared on copper substrate using electrochemical deposited method at various bath temperatures and applied to water splitting.•The film deposited at lower temperature exhibited more prominent texture on (111) orientation.•The photocurrent of the Cu2O films increased with decreasing deposited temperature. It is likely due to the intrinsic of a higher charge carrier concentration, and a lower resistance within Cu2O crystal and at Cu2O/electrolyte interface which the Cu2O films deposited at 35̊. In this study, we attempted to quantitatively interpret the effect of electrodeposition temperature on Cu2O film's microstructure, optical and photoelectrochemical properties. Three deposit temperatures (35, 50 and 65°C) were taken into consideration. Based upon our observations, a general trend was concluded. That is, Cu2O films deposited at lower temperature (35°C) always possessed a high degree of preferential orientation, smaller pyramidal-like crystal size, high photolumminance and a higher carrier concentration. These properties made Cu2O films deposited at 35°C a better photoelectrochemical performance with photocurrent density of −0.22mA/cm2 bias −0.4V vs. SCE. This value is about 35% higher than those Cu2O films deposited at higher temperatures. Observed higher photocurrent density is likely due to the intrinsic of a higher charge carrier concentration, and a lower resistance within Cu2O crystal and at Cu2O/electrolyte interface. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-05-15 出處： Applied Surface Science, 2014-05, Vol.301, p.369-377 版權： 2014 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0169-4332 識別號： DOI: 10.1016/j.apsusc.2014.02.085
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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