850-nm edge-illuminated Si photodiodes fabricated with CMOS-MEMS technology

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题名:	850-nm edge-illuminated Si photodiodes fabricated with CMOS-MEMS technology
作者:	辛裕明;Hsieh, Yu-Chen;Chou, Fang-Ping;Wang, Ching-Wen;Huang, Chih-Ai;Hsin, Yue-Ming
贡献者:	資訊電機學院電機工程學系
关键词:	Avalanche photodiodes;Bandwidth;CMOS integrated circuits;CMOS technology;edge-illuminated photodiodes;micro-electro-mechanical systems (MEMS);photodetectors;Photodiodes;Silicon;Substrates
日期:	2013-10-07
上传时间:	2026-04-23 13:13:19 (UTC+8)
出版者:	Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:	摘要： This letter examines edge-illuminated silicon photodiodes (PDs) fabricated using standard CMOS technology operated at 850-nm wavelength. A micro-electro-mechanical systems (MEMS) process was employed to expose the illuminated surface and achieve edge illumination. A single-mode lensed fiber is employed to inject light into the depletion region of the PD directly, limiting and reducing the diffusive carriers within the bulk Si substrate. Through employing this procedure, this letter achieved a superior performance in the 3-dB bandwidth compared with that yielded by vertically illuminated PDs. The 5.4 GHz high bandwidth was obtained using an edge-illuminated PD with a 20 \mu{\rm m}\times\, 15.6 \mu{\rm m} active region. 其他題名： LPT 出版者： IEEE 出版日期： 2013-10-15 出處： IEEE photonics technology letters, 2013-10, Vol.25 (20), p.2018-2021 資源來源： IEEE All-Society Periodicals Package (ASPP) 1998–Present 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2013.2280987 識別號： CODEN: IPTLEL
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