摘要： A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. 出版者： Elsevier Ltd 出版日期： 2014-01 出處： Microelectronics, 2014-01, Vol.45 (1), p.89-94 版權： 2013 Elsevier Ltd 識別號： ISSN: 1879-2391 識別號： ISSN: 0026-2692 識別號： DOI: 10.1016/j.mejo.2013.10.005
