Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod

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Title:	Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod
Authors:	姚毓峰;Liao, Che-Hao;Chang, Wen-Ming;Chen, Horng-Shyang;Chen, Chih-Yen;Yao, Yu-Feng;Chen, Hao-Tsung;Su, Chia-Ying;Ting, Shao-Ying;Kiang, Yean-Woei;Yang, C. C.
Contributors:	資訊電機學院電機工程學系
Date:	2012-07-02
Issue Date:	2026-04-23 14:07:48 (UTC+8)
Publisher:	The Optical Society;United States
Abstract:	摘要： With the nano-imprint lithography and the pulsed growth mode of metalorganic chemical vapor deposition, a regularly-patterned, c-axis nitride nanorod (NR) array of quite uniform geometry with simultaneous depositions of top-face, c-plane disc-like and sidewall, m-plane core-shell InGaN/GaN quantum well (QW) structures is formed. The differences of geometry and composition between these two groups of QW are studied with scanning electron microscopy, cathodoluminescence, and transmission electron microscopy (TEM). In particular, the strain state analysis results in TEM observations provide us with the information about the QW width and composition. It is found that the QW widths are narrower and the indium contents are higher in the sidewall m-plane QWs, when compared with the top-face c-plane QWs. Also, in the sidewall m-plane QWs, the QW width (indium content) decreases (increases) with the height on the sidewall. The observed results can be interpreted with the migration behaviors of the constituent atoms along the NR sidewall from the bottom. 其他題名： Opt Express 出版者： United States 出版日期： 2012-07-02 出處： Optics express, 2012-07, Vol.20 (14), p.15859 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.20.015859 識別號： PMID: 22772276
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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