Double-sided transparent photoanode of ZnO nanowire arrays sensitized by CdS and CdSe in photoelectrochemical cells for solar hydrogen production

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题名:	Double-sided transparent photoanode of ZnO nanowire arrays sensitized by CdS and CdSe in photoelectrochemical cells for solar hydrogen production
作者:	林進榮;Lin, Chin-Jung;Lin, Shi-Ni;Lai, Jhih-Hong
贡献者:	工學院環境工程研究所
关键词:	Arrays;Cadmium selenides;Cadmium sulfides;Conversion;Deposition;Efficiency;Indium tin oxide;Photoanode;Photoelectrochemical Cells;Quantum dots;ZNO NANOWIRE ARRAYS
日期:	2016-11-01
上传时间:	2026-04-23 15:01:29 (UTC+8)
出版者:	American Scientific Publishers
摘要:	摘要： A double-sided CdS and CdSe-sensitized ZnO nanowire (ZnR)/indium tin oxide (ITO) photoelectrode is fabricated using solution-based processes to improve the solar-to-hydrogen conversion efficiencies of photoelectrochemical (PEC) cells. Vertically aligned ZnR arrays were grown directly on both sides of the transparent ITO glass substrates by chemical bath deposition method and then coated with CdS and CdSe quantum dots (QDs) as the photosensitizer. This fabricated photoanode with double-sided QD sensitization enables the formation of the tandem structure as an effective heterojunction extending toward the visible spectrum and toward an effective separation of charge carriers. For PEC hydrogen generation under one-sun irradiation, the double-sided transparent photoanode of ZnR arrays with conformal QD deposition exhibited a conversion efficiency of 4.9%. Compared with that in the photoanode with layered QD aggregation, improvement in conversion efficiency was approximately 70%. 其他題名： Nanosci Nanotechnol Lett 出版者： American Scientific Publishers 出版日期： 2016-11-01 出處： Nanoscience and nanotechnology letters, 2016-11, Vol.8 (11), p.961-964 識別號： ISSN: 1941-4900 識別號： EISSN: 1941-4919 識別號： DOI: 10.1166/nnl.2016.2181
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