鈣鈦礦/TOPCon 疊層太陽能電池因具有突破單接面太陽能電池 Shockley–Queisser（S–Q）效率極限的潛力而備受關注。然而，鈣鈦礦與矽晶子電池之能隙匹配、電洞傳輸層於 TOPCon 表面的成膜均勻性，以及透明導電氧化層（Transparent Conductive Oxide， TCO）濺鍍製程對電子傳輸層及鈣鈦礦層造成的損傷，仍是限制元件效率與穩定性的關鍵因素。本研究首先調控適用於 TOPCon 底電池之寬能隙鈣鈦礦吸光層，成功製備能隙為 1.65 eV 之單接面鈣鈦礦太陽能電池，其最佳效率（Power Conversion Efficiency， PCE）達 19.28%。接著，比較 MeO-2PACz 與 Car-FO 兩種電洞傳輸層材料，結果顯示 Car-FO 可改善界面載子傳輸，使填充因子（Fill Factor， FF）由 71% 提升至 74%，開路電壓（Open-Circuit Voltage， Voc）由 1.105 V 提升至 1.111 V，元件效率亦由 19.36% 提升至 19.79%。此外，本研究探討不同厚度銀（Ag）緩衝層及原子層沉積氧化錫（Atomic Layer Deposition SnOx， ALD-SnOx）緩衝層對半透明鈣鈦礦太陽能電池之影響。結果顯示，1 nm Ag 緩衝層可有效降低 TCO 濺鍍造成之損傷，使平均 FF 由 43.56% 提升至 64.73%；相較之下，3 nm Ag 因光學穿透率下降，使積分電流由 15.56 mA cm-2 降低至 11.58 mA cm-2。另一方面，250 次循環沉積之 ALD-SnOx 緩衝層相較於 150 次循環具有較低之有效效率點之損失率（11.2% vs. 55.6%），並較 350 次循環展現更佳之電性分析結果。最後，將最佳化之半透明鈣鈦礦元件整合至鈣鈦礦/TOPCon 疊層太陽能電池中，採用 1 nm Ag 緩衝層與 250 次循環 ALD-SnOx 緩衝層之元件，分別獲得 20.06% 與 20.23% 的光電轉換效率。研究結果證實，透過電洞傳輸層最佳化及透明電極保護層設計，可有效提升鈣鈦礦/TOPCon 疊層太陽能電池之效率與穩定性，對高效率疊層太陽能電池之發展具有重要參考價值。;Perovskite/TOPCon tandem solar cells have attracted considerable attention owing to their potential to surpass the Shockley–Queisser (S–Q) efficiency limit of single-junction solar cells. However， several challenges remain， including bandgap matching between the perovskite and silicon sub-cells， the uniform formation of the hole transport layer (HTL) on the TOPCon surface， and sputtering-induced damage to the electron transport layer (ETL) and perovskite absorber during the deposition of transparent conductive oxide (TCO) electrodes， all of which limit device efficiency and operational stability. In this study， a wide-bandgap perovskite absorber suitable for TOPCon bottom cells was first optimized， and a single-junction perovskite solar cell with a bandgap of 1.65 eV achieved a maximum power conversion efficiency (PCE) of 19.28%. Subsequently， two hole transport materials， MeO-2PACz and Car-FO， were systematically compared. The results showed that Car-FO improved interfacial carrier transport， increasing the fill factor (FF) from 71% to 74%， the open-circuit voltage (Voc) from 1.105 V to 1.111 V， and the PCE from 19.36% to 19.79%. Furthermore， the effects of ultrathin silver (Ag) buffer layers with different thicknesses and atomic layer deposited tin oxide (ALD-SnOx) buffer layers on the performance of semi-transparent perovskite solar cells were investigated. A 1 nm Ag buffer layer effectively mitigated sputtering-induced damage during TCO deposition， increasing the average FF from 43.56% to 64.73%. In contrast， increasing the Ag thickness to 3 nm reduced optical transmittance， resulting in a decrease in the integrated current density from 15.56 to 11.58 mA cm⁻². In addition， the 250-cycle ALD-SnOx buffer layer exhibited a substantially lower maximum power point efficiency degradation rate than the 150-cycle sample (11.2% vs. 55.6%) and demonstrated superior electrical characteristics compared with the 350-cycle sample. Finally， the optimized semi-transparent perovskite solar cells were integrated with TOPCon bottom cells to fabricate monolithic perovskite/TOPCon tandem solar cells. Devices incorporating a 1 nm Ag buffer layer and a 250-cycle ALD-SnOx buffer layer achieved PCEs of 20.06% and 20.23%， respectively. These results demonstrate that optimizing the hole transport layer together with introducing protective buffer layers for transparent electrodes can effectively enhance the efficiency and stability of perovskite/TOPCon tandem solar cells， providing a promising strategy for the development of high-efficiency tandem photovoltaic devices.
