二硫化鉬（MoS2）為過渡金屬二硫屬化物中最具代表性的材料之一。隨著層數減少，其能帶結構會由間接能隙逐漸轉變為直接能隙，並可於少層及單層材料中觀察到由布里淵區K點之A、B激子躍遷所產生的光致發光訊號。另一方面，石墨烯量子點的光致發光主要來自量子侷限效應與表面態，並可透過異質原子摻雜（例如：硫、氮）調控其發射波長與強度。拓樸絕緣體具有體相絕緣與表面導電的特性，且可能於紫外光至近紅外光範圍內展現類似於表面電漿的光學響應，進而引發電場增強或界面電荷轉移的現象。本研究透過UV-vis-NIR、PL及光熱實驗探討硒化鉍（Bi2Se3）分別與少層MoS2或硫、氮共摻雜石墨烯量子點（S，N-GQDs）耦合後的光學行為與可能的機制，並評估其在感測應用中的潛力。研究結果顯示，Bi2Se3與MoS2或S，N-GQDs複合後，於較高Bi2Se3濃度下皆呈現吸收增強，但PL強度則隨Bi2Se3濃度增加而下降。其中，Bi2Se3/MoS2的PL淬熄可能與光誘導電荷轉移及非輻射複合有關；Bi2Se3/S，N-GQDs則可能受到螢光共振能量轉移、光誘導電荷轉移及缺陷態捕捉等多種非輻射途徑共同影響。;Molybdenum disulfide (MoS2)， a representative transition metal dichalcogenide (TMDC)， exhibits a transition from an indirect to a direct bandgap with decreasing layer number， giving rise to photoluminescence (PL) in few-layer and monolayer MoS2 through A and B exciton transitions at the K point of the Brillouin zone. On the other hand， graphene quantum dots (GQDs) are carbon nanomaterials whose PL arises from a combination of quantum confinement and surface-related states. Heteroatom doping (e.g.， S and N) can tune their emission wavelength and intensity. Topological insulators， which feature an insulating bulk and conductive surface states， exhibit plasmon-like optical responses in the ultraviolet to near-infrared range when nanostructured and under certain conditions， potentially inducing near-field enhancement and interfacial charge transfer. In this study， UV-vis-NIR absorption spectroscopy， PL spectroscopy， and photothermal measurements were employed to investigate the optical behavior and possible mechanisms of few-layer MoS2 and S，N-GQDs coupled with bismuth selenide (Bi2Se3)， as well as their potential for sensing applications. The results showed that Bi2Se3/MoS2 and Bi2Se3/S，N-GQDs exhibited enhanced absorption at higher Bi2Se3 concentrations， whereas their PL intensities decreased with increasing Bi2Se3 concentration. The PL quenching of Bi2Se3/MoS2 was attributed to photon-induced charge transfer and nonradiative recombination， while that of Bi2Se3/S，N-GQDs may result from the combined effects of fluorescence resonance energy transfer， photon-induced charge transfer， and defect-state trapping.
