二硫化鉬 (MoS2) 因其優異的性能和原子級厚度，是一種極具潛力的下一代電子裝置通道材料。然而，目前的生長方法通常需要在藍寶石基板上沉積、生長，然後進行轉移工藝，這會使薄膜可能造成伸張、破損等缺陷，進而影響後續製程良率；並且傳統生長化學氣相沉積 (Chemical vapor deposition) 製程所需溫度在700 °C以上，於玻璃等低溫基板上限制了應用；此外，也與現代互補式氧化物金屬半導體 (Complementary Metal-Oxide-Semiconductor，CMOS) 半導體後段製程工藝 (Back-End of Line，BEOL) 的整合不相容。BEOL中其介電層和多層金屬對於溫度變化是敏感的，過高的溫度會使導線融熔、抑或是造成結構損壞。而於絕緣基板上直接生長的方法，從而提高了製程相容性；同時減少了轉印步驟，可以避免薄膜引入缺陷。然而，實現高結晶度和均勻性仍然面臨挑戰，限制了功能性元件的應用。 本文提出了一種基於溶液化的 MoS2 薄膜合成方法，該方法使用複合雙功能前驅體，並以熱分解反應法將溶液還原成MoS2。本研究使用了四硫代鉬酸銨 ( (NH4)2MoS4) 和鉬酸鈉 (Na2MoO4) 的混合物，其中四硫代鉬酸銨提供鉬和硫，而鉬酸鈉提供額外的鉬，鈉則降低成核能障以及提升表面擴散於促進高結晶性。將前驅物塗佈成膜在絕緣基板上，並覆蓋一層薄金屬催化層，然後在 H₂/Ar 氣氛中以600 °C的溫度進行退火，藉由上層金屬驅動前驅物轉化為其結晶為MoS2。拉曼光譜和光致發光 (PL) 特性證實了高品質薄膜的形成。在優化的前驅物比例下，於600 ℃退火可獲得具有 MoS₂ 特徵訊號薄膜，其拉曼光譜 E2g1和A1g 峰間距為Δ=22.43 cm⁻¹、PL半高寬為82.94 meV。本研究也製備了背閘場效電晶體 (FET) 以評估其電性特徵。以證明該方法可望在絕緣基板上實現可擴展的、CMOS相容的晶體 MoS2 生長，具有應用於 BEOL 整合的巨大潛力。;Molybdenum disulfide (MoS2)， owing to its excellent properties and atomically thin structure， is considered a highly promising channel material for next-generation electronic devices. However， conventional growth methods generally require MoS₂ to be deposited and grown on sapphire substrates， followed by a transfer process. Such transfer procedures may introduce strain， cracks， and other defects into the films， thereby reducing the yield of subsequent device fabrication. In addition， conventional chemical vapor deposition (CVD) processes typically require growth temperatures above 700 °C， which limits their applicability to low-temperature substrates such as glass. These high-temperature processes are also incompatible with modern complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) integration. The dielectric layers and multilayer metal interconnects used in BEOL structures are sensitive to thermal exposure， and excessive temperatures may cause metal interconnect melting or structural damage. Direct growth on insulating substrates can improve process compatibility while eliminating the transfer step and reducing transfer-induced defects. Nevertheless， achieving MoS₂ films with high crystallinity and uniformity remains challenging， thereby limiting their application in functional electronic devices. In this study， a solution-based method for synthesizing MoS₂ thin films was proposed. A mixed bifunctional precursor was employed and thermally decomposed and reduced to form MoS₂. The precursor solution consisted of ammonium tetrathiomolybdate ((NH4)2MoS4) and sodium molybdate (Na2MoO4) . Ammonium tetrathiomolybdate served as the molybdenum and sulfur source， whereas sodium molybdate supplied additional molybdenum. The introduced sodium species were expected to reduce the nucleation energy barrier and enhance surface diffusion， thereby promoting the formation of highly crystalline films. The precursor solution was coated onto an insulating substrate and subsequently covered with a thin metallic catalytic layer. The samples were then annealed at 600 °C under an H₂/Ar atmosphere， during which the upper metal layer facilitated the conversion and crystallization of the precursor into MoS₂. Raman spectroscopy and photoluminescence (PL) measurements confirmed the formation of high-quality MoS₂ films. Under the optimized precursor ratio and annealing conditions， a continuous bilayer MoS₂ film was obtained at 600 °C. The Raman peak separation between the E₂g¹ and A₁g modes was 22.43 cm⁻¹， and the full width at half maximum of the PL peak was 82.94 meV. Back-gated field-effect transistors (FETs) were fabricated to evaluate the electrical characteristics of the synthesized films. This method enables scalable and CMOS-compatible growth of crystalline MoS₂ directly on insulating substrates and therefore demonstrates considerable potential for BEOL-integrated electronic applications.
