近年來人工智慧 AI (Artificial Intelligence) 以及高效能運算 HPC (High Performance Computing)的強烈需求與發展，驅動了異質整合(Heterogenous Integration)的規模擴張，未來需要將更多運算核心與記憶體整合在單一封 裝內，傳統的矽中介層成本過高，面板級封裝(Panel Level Packaging)成 為解決方案之一，無鹼玻璃基板因其優異的熱力學穩定性與平整度，成為新 一代 IC 載板( IC Substrate)之關鍵材料。 然而要如何增加金屬線路與平滑玻璃表面的附著力，成為影響製程可 靠度的主要瓶頸。本研究針對無鹼玻璃基板，使用 CCP-RIE 電漿蝕刻機做 表面粗化，並探討後處理清潔對金屬界面附著力之影響。實驗結果顯示使用 四氟化碳(CF4)混合氬氣(Ar)電漿處理雖能提高粗糙度來增加線路 附著力， 但玻璃表面粗化後若無適當的將表面的副產物(byproduct)去除，其界面的 拉力值(Peeling Strength)只有 110gf/cm 左右，遠低於工業標準的 500gf/cm。 研究進一步透過表面元素分析發現，確認電漿粗化後基板表面的副產 物(byproduct)殘留於界面而形成了弱界面層(Weak Boundary Layer， WBL) 致使附著力不佳，電漿後導入溼式清洗程序及中性洗劑便能有效移除，進而 促使金屬種子層(Ti)與玻璃基材形成強大的 Ti-O-Si 共價鍵結。本研究不 僅證實了溼式清洗在玻璃表面粗化後的決定性作用，並透過 XPS 分析確認了界面失效模型，為近年來玻璃載板之金屬化製程開發提供有效的參考價 值。;In recent years， the strong demand of Artificial Intelligence (AI) and High Performance Computing (HPC) have driven the large-scale expansion of heterogeneous integration. In the future， more computing cores and memory will need to be integrated into a single package. Traditional silicon interposers are too expensive， so panel-level packaging has become one of the solutions. Alkali-free glass substrates have become a key material for the next generation of IC substrates due to their excellent thermodynamic stability and flatness. However， increasing the adhesion between seed layer and glass become a major bottleneck affecting process reliability. This study used a CCP-RIE plasma etching machine to roughen the surface of alkali-free glass substrates and investigated the impact of post-treatment cleaning on the interface between metal and glass. Experimental results showed that although the use of carbon tetrafluoride (CF4) mixed with argon plasma treatment can improve roughness and thus increase adhesion. The peeling strength is only about 110 gf/cm， far below the industry standard of 500 gf/cm if the byproduct on the surface can not properly removed after roughening. Further surface elemental analysis revealed that byproduct remaining on the surface of glass after plasma roughening and formed a weak boundary layer (WBL)， resulting in poor adhesion. These byproducts were effectively removed by a wet cleaning process using a neutral detergent after plasma treatment， thereby promoting the formation of a strong Ti-O-Si covalent bond between the metal seed layer (Ti) and the glass substrate. This study not only confirms the decisive role of wet cleaning after glass surface roughening but also validates the interface failure model through XPS analysis， providing valuable reference for the development of metallization processes for glass substrates in recent years.
