在半導體製程中，以紫外光來進行微影與固化是不可或缺的技術，為達到高良率的製程，曝光機構的輸出光型需達到高均勻度、特定尺寸及準直角之嚴格限制，因此光學系統設計及元件加工面臨高度的挑戰性。此外，隨著大尺寸晶圓製程技術的發展，大面積的曝光之需求日益增加，因此，為避免直接加大元件尺寸增加系統設計的複雜度，以及元件製程的昂貴，本論文提出以數個相同曝光機組合進行「光型疊加」的方式來拓展曝光面積，驗證開發具備擴展性的 UV-LED 曝光系統的可行性，藉此達成降低開發成本並滿足大面積曝光之需求。因應產業需求，我們希望開發出的曝光機具有曝光面積約為 600 × 600 mm² 之矩形均勻光型、其最低照度大於 20 mW/cm²、不均勻度低於 5%、且工作距離 (Working Distance， WD) 需小於 500 mm。 首先，我們針對單一曝光機中各元件配置及系統參數，包括：紫外光源、聚光透鏡、透鏡陣列、工作距離…等參數進行探討其對光型品質之影響；其次，我們以此光學系統為出發點，組合3 x 3個曝光機，來疊加縫合9個光型以滿足曝光面積要求，同時，我們進行元件與系統參數優化，配合縫合機制尋求最佳配置，來提升整體光型的均勻度以及光學利用率。 在工作距離為495 mm的條件下，我們可以完成曝光面積為 629 × 629 mm²，不均勻度為12.2 %，且最低照度為 22 mW/cm² 的光型設計，其效能與目標有所差距，但若將工作距離小幅放寬至615 mm，則不均勻度可有效降至為4.7 %，且最低照度提升到 29.2 mW/cm²，面積為570 × 570 mm²，更接近目標光型的均勻度要求。這些成果表示，我們提出的光型疊加技術加上以此進行系統參數的調整，確實能同時考量實際製程能力與工業規格要求，讓大面積曝光機的規格達到產業界應用之需求，為低成本、大面積之光學曝光機具提供具競爭力之解決方案。;Ultraviolet (UV) lithography and curing are essential technologies in semiconductor manufacturing. To achieve high process yield， an exposure system must provide high illumination uniformity， a specified exposure area， and a well-controlled collimation angle. As wafer sizes continue to increase， the demand for large-area exposure has grown significantly. Enlarging optical components， however， increases both system complexity and manufacturing cost. This study proposes a light-pattern stitching method that combines multiple identical UV-LED exposure modules to expand the effective exposure area， providing a scalable and cost-effective solution for large-area exposure applications. According to industrial specifications， the proposed exposure system is expected to provide a uniform rectangular illumination field of approximately 600 × 600 mm²， with an irradiance greater than 20 mW/cm²， a non-uniformity below 5%， and a working distance (WD) shorter than 500 mm. A single exposure module was first designed by investigating the effects of key optical parameters， including the UV light source， condenser lens， lens array， and working distance. Subsequently， a 3 × 3 array of exposure modules was employed to stitch nine illumination patterns together. System parameters were further optimized to improve illumination uniformity and optical efficiency while meeting the required exposure area. At a working distance of 495 mm， the proposed system achieved an exposure area of 629 × 629 mm²， a minimum irradiance of 22 mW/cm²， and a non-uniformity of 12.2%. By increasing the working distance to 615 mm， the non-uniformity was reduced to 4.7%， while the minimum irradiance increased to 29.2 mW/cm²， the exposure area of 570 × 570 mm². These results demonstrate that the proposed light-pattern stitching technique effectively enables scalable， low-cost， large-area UV exposure while satisfying industrial performance requirements. In conclusion， this study first designs a rectangular light field with high uniformity and subsequently utilizes light pattern superposition techniques alongside dynamic system parameter adjustments. It provides a competitive solution for the development of low-cost， large-area optical exposure systems.
