二硫化鉬（MoS₂）為具潛力的半導體二維材料，因其可調控能隙（Tunable Band Gap）、高光電轉換效率（High Photovoltaic Conversion Efficiency）、無懸鍵（Dangling bond）及可克服短通道效應（Short Channel Effect）等特性，廣泛應用於下一代光電元件與場效電晶體中。本研究著重於大面積、均勻且高品質MoS₂薄膜之生長技術開發，並針對其場效電晶體進行電特性分析。 本研究採用氣相前驅物MoCl₅與H₂S，透過全氣相低壓化學氣相沉積（LPCVD）製程，分別在500°C以及700°C進行參數優化，以探討最佳的MoS₂薄膜結晶品質及均勻性。為評估薄膜於橫向大面積之均勻性與表面平整度，本研究於基板上1至 9公分處進行間隔1公分之拉曼光譜與光致發光（PL）光譜量測，並輔以拉曼區域掃描（Raman Mapping）、X光光電子能譜（XPS）、原子力顯微鏡（AFM）、掃描式電子顯微鏡（SEM）及穿透式電子顯微鏡（TEM）進行微觀結構分析。結果顯示，在500 °C及700 °C條件下成功成長出層數可控、結晶性佳且表面平整之單層MoS₂薄膜，其中PL光譜之半高寬（FWHM）最低分別可達83 meV及73meV，表現出優異的光學品質。 在元件應用端，本研究後續使用Ti/Al（10/50nm）作為金屬電極，製作MoS₂之場效電晶體並進行特性量測，結果顯示，500度元件之最高電流開關比（On/Off ratio）為1.12×104，整體平均載子遷移率約為1.37 cm²/V·s，其中在w=60μm， L=3μm時最高為3.68cm²/V·s；700度元件之最高電流開關比（On/Off ratio）為6.45×104，整體平均載子遷移率約為5.24 cm²/V·s，其中在w=80μm， L=10μm時有最高值為9.05cm²/V·s，此結果不僅初步驗證了 LPCVD 成長之大面積 MoS₂ 薄膜具備基礎之載子傳輸能力，本研究亦進一步探討元件在實際操作下之電學行為，解析影響開關比與漏電流之潛在物理機制。本論文之成果確立了 MoS₂ 大面積生長之調控視窗，並為未來二維電子元件之製程優化與效能提升，提供了重要的評估基礎與改善方向。;Two-dimensional (2D) molybdenum disulfide (MoS2) has emerged as a promising semiconductor material for next-generation optoelectronic devices and field-effect transistors due to its tunable band gap， high photoelectric conversion efficiency， dangling-bond-free surface， and immunity to short-channel effects. This study focuses on the development of large-area， uniform， and high-quality MoS2 thin film growth technology， accompanied by a comprehensive electrical characterization of its field-effect transistors.Using gaseous precursors MoCl5 and H2S， a fully vapor-phase low-pressure chemical vapor deposition (LPCVD) process was developed and optimized at 500℃ and 700℃ to investigate the optimal crystallization quality and uniformity of the MoS2 films. To evaluate large-scale lateral uniformity and surface flatness， Raman and photoluminescence (PL) spectra were measured at 1 cm intervals across a 1 to 9 cm substrate span. These measurements were complemented by microstructural analyses using Raman mapping， X-ray photoelectron spectroscopy (XPS)， atomic force microscopy (AFM)， scanning electron microscopy (SEM)， and transmission electron microscopy (TEM). The results demonstrate the successful growth of layer-controllable， highly crystalline， and smooth monolayer MoS2 films at both 500℃ and 700℃. Notably， the minimum full width at half maximum (FWHM) of the PL peaks reached down to 83 meV and 73 meV， respectively， exhibiting exceptional optical quality. For device applications， MoS2 field-effect transistors were fabricated using Ti/Al (10/50 nm) as metal electrodes. The electrical measurements reveal that the 500℃ devices achieved a maximum current on/off ratio of 1.12×104 with an average field-effect mobility of approximately 1.37 cm2/V•s with an optimal value of 3.68 cm2/V•s at W=60μm， L=3μm. In contrast， the 700℃ devices exhibited a maximum current on/off ratio of 6.45×104 with an average mobility of 5.24 cm2/V•s with an optimal value of 9.05 cm2/V•s at W=80μm， L=10μm. These results not only preliminarily verify the fundamental carrier transport capabilities of large-area MoS2 films grown by LPCVD， but also delve into the operational electrical behaviors to analyze the underlying physical mechanisms governing the on/off ratio and leakage currents. The findings of this study establish a reliable process window for the large-scale growth of MoS2 and provide a solid foundation and improvement roadmap for future process optimization and performance enhancement of 2D electronic devices.
