隨著半導體製程微縮及電漿蝕刻功率提升，製程設備腔體及零組件長時間暴露於含氟電漿環境中，容易產生表面腐蝕、材料劣化及微粒污染，進而影響製程穩定性與晶圓良率。因此，本研究以氧化鋁（Al₂O₃）與氧化釔（Y₂O₃）多層堆疊薄膜為研究對象，探討不同堆疊比例對抗電漿腐蝕特性之影響，並評估適合之薄膜結構。 本研究採用原子層沉積（Atomic Layer Deposition， ALD）技術，於 200 °C 下製備不同 Al₂O₃/Y₂O₃ 單層厚度比例之多層薄膜，並以 CF₄（60 sccm）、O₂（15 sccm）及 Ar（30 sccm）進行微波電漿蝕刻，蝕刻時間分別為 2、4 及 6 小時。藉由 原子力顯微鏡、高解析雙束型聚焦離子束顯微鏡、場發射穿透式電子顯微鏡及穿透式電子顯微鏡–能量散佈 X 射線光譜分析等方法，探討蝕刻前後薄膜之表面形貌、截面結構及元素分布變化。 實驗結果顯示，不同 Al₂O₃/Y₂O₃ 堆疊比例會影響薄膜之表面形貌、結構完整性及含氟反應程度。經過不同的蝕刻時間，其等效氟化程度相較於單層的Al₂O₃薄膜或Y₂O₃薄膜都來的高。然而，等效氟化程度並非判斷抗電漿腐蝕能力之唯一依據，仍須結合表面形貌與截面結構進行綜合評估。 綜合上述結果，本研究認為多層堆疊結構具有較佳之抗電漿腐蝕特性。研究結果顯示，透過 ALD 技術控制 Al₂O₃/Y₂O₃ 之奈米尺度堆疊結構，可提升薄膜於 CF₄ 電漿環境下之結構穩定性，並可作為半導體製程設備抗電漿腐蝕保護膜設計之參考。;With the scaling down of semiconductor processes and the increase in plasma etching power， process chamber components are continuously exposed to fluorine-containing plasma environments. This prolonged exposure leads to surface corrosion， material degradation， and particle contamination， which negatively affect process stability and wafer yield. Therefore， this study investigates Al₂O₃/Y₂O₃ multilayer stacked thin films to evaluate the effects of different stacking ratios on plasma corrosion resistance and to identify an optimal thin film structure. In this study， atomic layer deposition (ALD) was employed at 200 °C to prepare multilayer thin films with various Al₂O₃/Y₂O₃ single-layer thickness ratios. Microwave plasma etching was conducted using CF₄ (60 sccm)， O₂ (15 sccm)， and Ar (30 sccm) for etching durations of 2， 4， and 6 hours， respectively. Characterization techniques， including atomic force microscopy (AFM)， high-resolution dual-beam focused ion beam (FIB) microscopy， field-emission transmission electron microscopy (FE-TEM)， and TEM combined with energy-dispersive X-ray spectroscopy (TEM-EDX)， were utilized to systematically investigate changes in surface morphology， cross-sectional structures， and elemental distributions of the films before and after etching. Experimental results indicate that varying the Al₂O₃/Y₂O₃ stacking ratios alters the surface morphology， structural integrity， and degree of fluorine reaction of the thin films. After different etching durations， the equivalent degree of fluorination in the multilayer films was found to be higher than that in single-layer Al₂O₃ or Y₂O₃ films. However， the equivalent degree of fluorination alone should not serve as the sole criterion for evaluating plasma corrosion resistance; a comprehensive assessment incorporating surface morphology and cross-sectional structural analysis is essential. Overall， this study demonstrates that the multilayer stacked structure exhibits superior plasma corrosion resistance. The findings reveal that controlling the nanoscale Al₂O₃/Y₂O₃ stacking structure via ALD enhances structural stability under CF₄ plasma environments， providing valuable insights for the design of anti-plasma corrosion protective coatings in semiconductor equipment.
