本研究以高功率脈衝磁控濺鍍 (High Power Impulse Magnetron Sputtering， HiPIMS) 技術製作氧化鎵(β-Ga₂O₃)薄膜，並進一步研究與分析其應用於深紫外光探測器 (Deep Ultraviolet Photodetector) 之元件特性。氧化鎵為一種具備超寬能隙 (~4.9 eV) 與天然太陽隱蔽 (Solar-blind)特性的氧化物半導體材料，擁有優異的化學穩定性與高臨界崩潰電場，為次世代高效能深紫外光感測元件的重要候選材料。本研究主要探討不同基板種類 (MgO， Sapphire， Fused Quartz)、初始濺鍍氧氣通量 (25~40 sccm) 以及高溫通氧退火條件對氧化鎵薄膜微觀結構、表面形貌與光電特性之影響，並藉由探測器元件對其進行製作與電性量測。 實驗部分，首先以HiPIMS磁控濺鍍技術於700°C、850°C下進行薄膜沉積，隨後於 850°C、950°C之純氧環境中進行持溫1小時之後退火處理。藉由X 光繞射儀(XRD)與原子力顯微鏡(AFM)等分析技術，評估薄膜之結晶取向轉變、磊晶品質與表面形貌起伏。元件製作方面，採用金屬-半導體-金屬 (MSM) 結構，利用微影技術定義圖案並沉積金屬電極，構成氧化鎵深紫外光感測器，並架設量測系統進行 255 nm 波長下之光暗電流 (I-V) 與暫態光響應 (I-t) 測試。 結果顯示，基板之晶格匹配度對薄膜品質具決定性影響。其中，單晶氧化鎂 (MgO)基板因具備極佳的磊晶模板效應，薄膜於退火後發生顯著的晶向轉換，展現出高度擇優之(-601)晶向與極低之半高寬，且表面形貌最為平滑。光電量測結果證實，製作之探測器展現出優異的光電效能：在氧化鎂基板會得到最低的暗電流及最佳的光暗電流比，在藍寶石基板會得到最佳元件開關連續性及響應時間，石英則是需要在控制成本之下可做的選擇。;This study utilizes High Power Impulse Magnetron Sputtering (HiPIMS) technology to deposit gallium oxide (β-Ga₂O₃) thin films and further investigates their device characteristics for deep ultraviolet (DUV) photodetector applications. Gallium oxide， an oxide semiconductor material featuring an ultra-wide bandgap (~4.9 eV) and natural solar-blind characteristics， possesses excellent chemical stability and a high critical breakdown field， making it a prominent candidate for next-generation high-performance DUV sensors. This research primarily explores the effects of different substrate types (magnesium oxide， sapphire， and quartz)， initial sputtering oxygen flow rates (25~40 sccm)， and high-temperature oxygen annealing conditions on the microstructure， surface morphology， and photoelectric properties of the gallium oxide films. Subsequently， photodetector devices were fabricated for electrical measurements. In the experimental phase， thin films were first deposited using HiPIMS technology at temperatures of 700°C and 850°C， followed by a post-annealing treatment in a pure oxygen environment at 850°C and 950°C for 1 hour. Analytical techniques such as X-ray diffraction (XRD) and atomic force microscopy (AFM) were employed to evaluate the crystal orientation transformation， epitaxial quality， and surface roughness of the films. For device fabrication， a metal-semiconductor-metal (MSM) structure was adopted. Photolithography was utilized to define patterns and deposit metal electrodes， completing the gallium oxide DUV photodetectors. A measurement system was established to conduct current-voltage (I-V) under dark and illumination conditions， as well as transient photoresponse (I-t) tests under a 265 nm wavelength light source. The results reveal that the lattice matching of the substrate exerts a decisive influence on the film quality. Specifically， due to its excellent epitaxial template effect， the single-crystal magnesium oxide (MgO) substrate induced a significant crystal orientation preferred(orientation with an extremely low full width at half maximum (FWHM) and the smoothest surface morphology. Photoelectric measurements confirmed that the fabricated photodetectors exhibited outstanding performance: the device on the MgO substrate achieved the lowest dark current and the best photo-to-dark current ratio (PDCR); the sapphire substrate yielded the best device switching stability and response time; meanwhile， quartz serves as a viable alternative when cost control is a primary consideration.
