傳統散熱方式隨電子元件功率密度提高,面臨單位面積傳熱能力不足,因此微尺度熱管理朝微奈米流道與相變冷卻發展。對薄膜蒸發與兩相微流道系統而言,液體補充效率直接影響蒸發區域的液膜穩定性。本研究利用石墨烯奈米流道結合電濕性控制,探討表面電荷密度改變時,潤濕性、毛細驅動、液體補充速度、質量流率與滑移長度的關係。 本研究以 PMMA 塗層雷射圖形、HF 濕蝕刻、CVD 單層石墨烯濕式轉移及陽極鍵合製作封閉式奈米流道,並以接觸角量測及顯微鏡觀測液體流動。石墨烯流道滑移長度達 70 nm,高於 SiO₂ 流道的 3 nm;滑移長度增加可降低流動阻力。相較尺寸相近的 SiO₂ 流道,石墨烯流道流速平均提升 33%,由截面積與流速計算之質量流率平均提升 44%。 在石墨烯流道低流阻優勢下,施加表面電荷可提升潤濕性與毛細驅動。表面電荷密度為 1.2 mC/m² 時,接觸角下降使毛細壓力提高 24.2%,流速再提升 4%;超過 2.3 mC/m² 時,電荷吸附力增強使石墨烯滑移長度下降,流速降低約 17.8%。結果顯示,電濕性需控制於低表面電荷密度,以維持高毛細驅動與低阻力界面,作為高熱通量散熱設計的參數基礎。;As electronic power density increases, conventional cooling methods face limitations in heat-transfer capacity per unit area, driving the development of nanochannels and phase-change cooling. In thin-film evaporation and two-phase microchannels, liquid replenishment is essential for maintaining liquid-film stability. This study uses electrowetting-controlled graphene nanochannels to investigate the relationships among wettability, capillary driving force, liquid replenishment velocity, mass flow rate, and slip length. Sealed nanochannels were fabricated through PMMA laser patterning, HF wet etching, wet transfer of monolayer CVD graphene, and anodic bonding. Contact angles and liquid flow were measured using microscopic observations. The slip length was 70 nm for graphene and 3 nm for SiO₂, indicating lower flow resistance in graphene channels. Compared with similarly sized SiO₂ channels, graphene channels increased the average liquid velocity by 33% and the average mass flow rate, calculated from the channel cross-sectional area and liquid velocity, by 44%. At the surface charge density of 1.2 mC/m², improved wettability increased the capillary pressure by 24.2% and the liquid velocity by a further 4%. However, above 2.3 mC/m², charge-induced adsorption reduced the graphene slip length, decreasing the liquid velocity by approximately 17.8%. Therefore, electrowetting should be maintained at a low surface charge density to balance capillary driving force and flow resistance, providing a basis for high-heat-flux cooling design.