第三章採用 WIN 120-nm GaN HEMT NP12-01 製程，設計一款操作於 40 GHz 之單級功率放大器。電路設計使用部分集總元件之匹配概念，以縮小匹配網路面積。量測結果顯示，於 40 GHz 下可達到 4.8 dB 增益、21.4 dBm 之 OP1dB，並於 OP1dB 時具有 14.7 % 之功率附加效率。;This thesis investigates the design of Q-band millimeter-wave power amplifiers. Two single-stage power amplifiers operating at 40 GHz were implemented using the WIN 100-nm GaAs pHEMT PP10-20 and WIN 120-nm GaN HEMT NP12-01 processes， respectively. The matching network design， stabilization techniques， and the corresponding simulation and measurement results are presented and discussed.
In Chapter 2， a 40-GHz single-stage power amplifier was designed using the WIN 100-nm GaAs pHEMT PP10-20 process. The design was based on the measured results of a previously fabricated circuit， followed by redesign and re-simulation with parasitic-effect compensation. A lumped-element (LE) matching approach was adopted to reduce the chip area occupied by the matching network. The measured results demonstrate a small-signal gain of 5.6 dB， an output 1-dB compression point(OP1dB) of 24.3 dBm， and a power-added efficiency (PAE) of 34.5 % at OP1dB.
In Chapter 3， a 40-GHz single-stage power amplifier was designed using the WIN 120-nm GaN HEMT NP12-01 process. A partially lumped-element matching approach was employed to further reduce the chip area occupied by the matching network. The measured results demonstrate a small-signal gain of 4.8 dB， an OP1dB of 21.4 dBm， and a PAE of 14.7 % at OP1dB.
