第一個電路使用 WIN 120-nm GaN HEMT NP12-01 製程，設計應用於 Ku 頻段之低雜訊放大器。採用了源極退化(source degeneration)架構。在 15 GHz 的頻率下，實現 7.6 dB 的增益，以及 3.1 dB 的雜訊指數。小訊號模擬與量測結果大致相符，雜訊指數則有後續改善的空間。
第二個電路使用 WIN 100-nm GaAs pHEMT PP10-20 製程，設計應用於 U 頻段之低雜訊放大器。採用了共源共閘(cascode)架構。經由先前電路偵錯，修正電晶體模型，再進行電路設計。在 48 GHz 的頻率下，實現 19.3 dB 的增益，以及 2.4 dB 的雜訊指數。增益、雜訊指數較佳但反射損耗仍需要優化改善。
第三個電路使用 WIN 100-nm GaAs pHEMT PP10-20 製程，設計應用於 W 頻段之低雜訊放大器。採用了共源共閘(cascode)架構。經由先前電路偵錯，修正電晶體模型，再進行電路設計。在 94 GHz 的頻率下，實現 13.7 dB 的增益，以及 3.9 dB 的雜訊指數。增益、雜訊指數較佳，但線性度不足的問題需要解決。;This thesis presents the design of a Ku-band low-noise amplifier for satellite communication and sensing using the WIN 120-nm GaN HEMT process， and U-band and W-band low-noise amplifiers implemented using the WIN 100-nm GaAs pHEMT process.
Current research trends are shifting towards microwave and millimeter-wave frequency bands， and the Ku-， U-， and W-band are introduced. The importance of low-noise amplifiers and their design challenges are then explained.
The first circuit， designed using a WIN 120-nm GaN HEMT NP12-01 process， is a low-noise amplifier applied to the Ku-band. It employs a source degradation architecture. At 15 GHz， it achieves a gain of 7.6 dB and a noise figure of 3.1 dB. Small-signal simulation and measurement results are largely in agreement， but there is room for further improvement in the noise figure.
The second circuit， designed using a WIN 100-nm GaAs pHEMT PP10-20 process， is a low-noise amplifier applied to the U-band. It employs a cascode architecture. Following debugging of the previous circuit and correction of the transistor model， the circuit design was then carried out. At 48 GHz， it achieves a gain of 19.3 dB and a noise figure of 2.4 dB. While the gain and noise figure are good， the reflection loss still needs optimization and improvement.
The third circuit， designed using a WIN 100-nm GaAs pHEMT PP10-20 process， is a low-noise amplifier applied to the W-band. It employs a cascode architecture. Following debugging of the previous circuit and correction of the transistor model， the circuit design was then carried out. At 94 GHz， it achieves a gain of 13.7 dB and a noise figure of 3.9 dB. The gain and noise figure are good， but the problem of insufficient linearity needs to be solved.
