隨着高頻通訊與大數據傳輸時代的來臨，玻璃憑藉其卓越的機械強度、優異的絕緣性及熱穩定性，已成為新世代電子封裝與微系統集成的核心材料，特別是在高頻應用領域，玻璃具備極低的介電常數與介電損耗與可調整之熱膨脹係數(CTE)，能顯著降低訊號傳輸延遲與能量損耗，在製作高性能射頻元件與高密度互連線路板面展現出巨大的應用潛力，然而，玻璃高度的硬脆性與化學惰性，使其在表面圖案化及深孔內壁之選擇性金屬化製程中面臨嚴峻挑戰。 本研究利用雷射誘導背向濕蝕刻(LIBWE)與選擇性無電鍍製程之玻璃金屬化技術，旨在玻璃基材表面及通孔結構內建構精密電路，該技術將雷射聚焦於玻璃基板與硫酸氧鈦吸收液之交界面，利用吸收液優異的光熱轉化效應實現局部材料的精密移除，在雷射加工的瞬時高能過程中，誘導吸收液發生熱化學水解，使生成的氧化鈦顆粒與玻璃表面之活性基團產生化學鍵結，達成原位植佈種子層之效果，此具備催化活性之種子層為後續無電鍍製程提供了穩定的成核基礎，確保金屬銅層能精確地沿著雷射加工軌跡生長，進而實現兼具高幾何精度與界面結合力之玻璃基板電路，後續將此加工技術延伸應用於已具穿孔之TGV玻璃基材，望能在微量材料移除或不造成原始結構損傷的前提下，成功附著活性晶種層，並搭配後續之自催化無電鍍銅技術，以達到高質量之孔內填銅效果。;With the advent of the high-frequency communication and big-data transmission era， glass has emerged as a core material for next-generation electronic packaging and microsystem integration owing to its excellent mechanical strength， superior insulation properties， and thermal stability. In particular， for high-frequency applications， glass possesses an extremely low dielectric constant and dielectric loss， along with a tunable coefficient of thermal expansion (CTE)， which can significantly reduce signal transmission delay and energy loss， demonstrating great application potential in the fabrication of high-performance radio-frequency components and high-density interconnect circuit boards. However， the high hardness， brittleness， and chemical inertness of glass pose severe challenges for surface patterning and selective metallization of through-hole sidewalls. This study utilizes a glass metallization technology combining laser-induced backside wet etching (LIBWE) and selective electroless plating， aiming to construct precision circuits on glass substrate surfaces and within via structures. In this technique， the laser is focused at the interface between the glass substrate and a titanyl sulfate absorption solution， exploiting the excellent photothermal conversion effect of the absorption solution to achieve precise local material removal. During the transient high-energy laser processing， the absorption solution undergoes thermochemical hydrolysis， allowing the resulting titanium oxide particles to form chemical bonds with the reactive functional groups on the glass surface， thereby achieving in-situ seed layer implantation. This catalytically active seed layer provides a stable nucleation foundation for the subsequent electroless plating process， ensuring that the copper metal layer grows precisely along the laser-processed trajectory， thereby realizing glass substrate circuits with both high geometric precision and strong interfacial adhesion. This processing technology will subsequently be extended to through-glass-via (TGV) substrates with pre-existing through-holes， with the goal of successfully attaching an active seed layer under conditions of minimal material removal or no damage to the original structure， and combining this with subsequent autocatalytic electroless copper plating to achieve high-quality via-filling with copper.
