隨著半導體元件持續朝向微縮化與異質整合發展，二維材料因具有原子級厚度及優異的電性、光學與熱傳特性，逐漸成為電子與光電元件的重要候選材料。然而，多數二維材料需透過化學氣相沉積生長於特定基板上，後續必須藉由轉印製程移轉至目標基板，因此如何在轉印過程中兼顧高完整性、低污染及大面積均勻性，成為二維材料實際應用的重要關鍵。 本研究以真空平壓乾式轉印技術為基礎，針對石墨烯 (Graphene)、二硫化鉬 (MoS2) 及六方氮化硼 (hexagonal boron nitride， hBN) 等典型二維材料進行多參數製程調整，探討高分子支撐層結構、烘烤溫度、脫層溶液、超音波作用方式、材料生長條件、薄膜厚度、轉印面積及目標基板形貌對轉印品質之影響。轉印結果主要透過光學顯微鏡影像進行完整性與潔淨度定量分析，並搭配Raman、PL、AFM、FIB-TEM及EDS等方法評估材料特性與膜層形貌。 研究結果顯示，PPC/PMMA雙層結構可結合PPC之柔順貼合與低殘留特性，以及PMMA之機械補強效果，因而在石墨烯與hBN轉印中呈現較佳表現。石墨烯轉印面積由1 × 1 cm2放大至6 × 6 cm2後，平均完整性仍可達99.03%。MoS₂之脫層行為則會隨生長系統與生長基板改變，其中PPC/PMMA搭配2 M NaOH及隔水超音波震盪，可改善連續膜MoS2之轉印結果，並完成與SiN波導基板及深寬比微結構之初步整合。hBN方面，薄膜生長條件、厚度及脫層方式均會影響轉印結果；對10 nm hBN採用60 °C NaOH加熱靜置脫層時，可獲得99.01%的平均完整性與99.45%的平均潔淨度，且所建立之製程亦可應用於5 nm hBN，但2 nm hBN與面積放大後之裂紋問題仍有待改善。 綜合上述結果，本研究建立了依二維材料特性、生長界面及幾何尺度調整之真空平壓乾式轉印流程，並釐清支撐層、界面分離與機械擾動對轉印品質之影響，可作為二維材料大面積轉印、超薄膜操作及特殊結構元件整合之製程參考。;As semiconductor devices continue to advance toward miniaturization and heterogeneous integration， two-dimensional (2D) materials have emerged as promising candidates for electronic and optoelectronic devices because of their atomic-scale thickness and outstanding electrical， optical， and thermal transport properties. However， most 2D materials are grown on specific substrates by chemical vapor deposition and must subsequently be transferred onto target substrates. Therefore， simultaneously achieving high film integrity， low contamination， and large-area uniformity during transfer is crucial for the practical application of 2D materials. In this study， a vacuum-assisted dry transfer technique based on vacuum lamination was employed to optimize multiple process parameters for representative 2D materials， including graphene， molybdenum disulfide (MoS2)， and hexagonal boron nitride (hBN). The effects of polymer support-layer structures， baking temperatures， delamination solutions， ultrasonic treatment methods， material growth conditions， film thicknesses， transfer areas， and target-substrate topographies on transfer quality were investigated. Transfer integrity and cleanliness were quantitatively evaluated using optical microscopy images， while Raman spectroscopy， photoluminescence spectroscopy， atomic force microscopy， focused ion beam–transmission electron microscopy， and energy-dispersive X-ray spectroscopy were used to characterize the material properties and film morphology. The results demonstrate that the PPC/PMMA bilayer structure combines the conformal contact and low-residue characteristics of PPC with the mechanical reinforcement provided by PMMA， thereby achieving superior performance in graphene and hBN transfer. When the graphene transfer area was increased from 1 × 1 cm2 to 6 × 6 cm2， the average film integrity remained as high as 99.03%. The delamination behavior of MoS2 varied depending on the growth system and growth substrate. For continuous MoS2 films， the combination of PPC/PMMA， 2 M NaOH， and indirect ultrasonic agitation improved the transfer results and enabled preliminary integration with SiN waveguide substrates and high-aspect-ratio microstructures. For hBN， the growth conditions， film thickness， and delamination method all affected the transfer results. For 10 nm hBN， static immersion in NaOH at 60 °C resulted in an average integrity of 99.01% and an average cleanliness of 99.45%. The established process was also applicable to 5 nm hBN; however， the transfer of 2 nm hBN and the cracking observed after transfer-area scaling still require further improvement. Overall， this study established a vacuum-assisted dry transfer process tailored to the material properties， growth interfaces， and geometric dimensions of 2D materials. The effects of support layers， interfacial delamination， and mechanical disturbances on transfer quality were also clarified. These findings provide a process reference for the large-area transfer of 2D materials， the handling of ultrathin films， and integration with devices featuring nonplanar structures.
