隨著第五代行動通訊(5G)、高效能運算(High Performance Computing， HPC)、人工智 慧(Artificial Intelligence， AI)、車用電子與高功率半導體技術之快速發展，電子元件逐漸 朝向高功率密度、高頻化及微型化方向發展，使元件於操作過程中所產生之熱通量顯著 提升，散熱問題已成為影響元件效能、系統穩定性及使用壽命之關鍵因素。因此，開發 兼具高導熱性、高可靠度及良好熱匹配特性之先進散熱材料與異質材料接合技術，已成 為電子封裝與熱管理領域之重要研究方向。 其中，鋁基碳化矽(Aluminum Silicon Carbide， Al-SiC)複合材料因具備輕量化、高熱 導率、熱膨脹係數(Coefficient of Thermal Expansion， CTE)可調控等特性，可有效降低熱 應力並提升散熱效能，逐漸成為功率模組、先進封裝與散熱基板之關鍵材料。單晶藍寶 石(Sapphire)薄基板則具有優異之機械強度、高光學穿透性、高硬度、化學穩定性及電氣 絕緣特性，能承受高溫、高電壓及高頻操作環境，並兼具良好的尺寸穩定性，因此廣泛 應用於光學元件、LED基板、射頻元件、感測器等領域。兩者之熱膨脹係數差異可透過 材料設計進行調整與改善，以降低異質接合時之界面應力並提升可靠性。 雷射透射式焊接（Laser Transmission Welding， LTW）技術，使雷射光穿透藍寶石於 鋁基碳化矽與藍寶石接合界面，產生局部能量吸收與瞬態熔融反應，以實現異質材料之 直接接合。相較於傳統接合技術，LTW具有熱影響區小、局部加熱、加工精度高及變形 量低等優勢，並分析其接合強度及界面微觀結構特性。 本研究利用單晶藍寶石優異之光學穿透特性，採用波長1030 nm之超短脈衝飛秒雷 射，建立Al-SiC複合材料與藍寶石之異質材料接合之製程基礎，使藍寶石之高熱穩定性 與 Al-SiC 之高導熱特性能夠有效整合，可望提供兼具光學透明性與高效率散熱能力之 異質封裝技術，具應用於高功率電子元件及先進光電封裝之發展潛力。;With the rapid development of fifth-generation (5G) communications， high-performance computing (HPC)， artificial intelligence (AI)， automotive electronics， and high-power semiconductor technologies， electronic devices are evolving toward higher power density， higher operating frequencies， and greater miniaturization. Consequently， the heat flux generated during device operation has increased significantly， making thermal management a critical factor affecting device performance， system reliability， and service lifetime. Therefore， the development of advanced thermal management materials and heterogeneous joining technologies with high thermal conductivity， high reliability， and excellent thermal compatibility has become an important research topic in electronic packaging. Among various thermal management materials， aluminum silicon carbide (Al-SiC) composites have attracted considerable attention owing to their lightweight characteristics， high thermal conductivity， and tailorable coefficient of thermal expansion (CTE)， which effectively reduce thermal stress and enhance heat dissipation performance. As a result， Al-SiC has become a promising material for power modules， advanced electronic packaging， and thermal management substrates. Single-crystal sapphire substrates possess excellent mechanical strength， high optical transparency， superior hardness， chemical stability， and electrical insulation， enabling reliable operation under high-temperature， high-voltage， and high frequency environments while maintaining excellent dimensional stability. Consequently， sapphire has been widely employed in optical components， LED substrates， radio-frequency (RF) devices， and sensors. Furthermore， the difference in the coefficients of thermal expansion between Al-SiC and sapphire can be mitigated through appropriate material design， thereby reducing interfacial thermal stress and improving the reliability of heterogeneous joints. Laser transmission welding (LTW) enables the laser beam to pass through the transparent sapphire substrate and concentrate energy at the interface between sapphire and Al-SiC， where localized energy absorption induces transient melting and interfacial reactions， thereby achieving direct joining of the dissimilar materials. Compared with conventional joining methods， LTW offers several advantages， including a small heat-affected zone， localized heating， high processing precision， and minimal thermal deformation. In addition， the joint strength and interfacial microstructure were systematically investigated. In this study， the excellent optical transparency of single-crystal sapphire was utilized to establish a laser transmission welding process for joining Al-SiC composites and sapphire using a 1030 nm ultrashort-pulse femtosecond laser. The proposed process effectively integrates the high thermal stability of sapphire with the superior thermal conductivity of Al-SiC， providing a heterogeneous packaging approach that combines optical transparency with efficient heat dissipation. The developed joining technology demonstrates significant potential for applications in high-power electronic devices and advanced optoelectronic packaging.
