Multiple negative differential resistances in crossed carbon nanotubes

NCUIR > Engineering College > Graduate Institute of Mechanical Engineering > journal & Dissertation > Item 987654321/26875

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26875

Title:	Multiple negative differential resistances in crossed carbon nanotubes
Authors:	Al Ahmad,M;Dragoman,D;Dragoman,M;Plana,R;Ting,JH;Huang,FY;Li,TL
Contributors:	機械工程研究所
Keywords:	Y-JUNCTIONS;LOGIC
Date:	2009
Issue Date:	2010-06-29 18:02:14 (UTC+8)
Publisher:	中央大學
Abstract:	An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate. Alternating positive and negative differential resistance regions are generated as a function of the drain-source voltage values and can be slightly shifted by the gate voltage. Moreover, the negative differential resistance is retrieved in a large bandwidth, of up to 100 MHz, when the structure is excited with ac signals. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3138815]
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Mechanical Engineering] journal & Dissertation

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