Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/27732

Title:	Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
Authors:	Lu,TC;Chen,JR;Chen,SW;Kuo,HC;Kuo,CC;Lee,CC;Wang,SC
Contributors:	薄膜技術中心
Keywords:	DISTRIBUTED BRAGG REFLECTORS;ENHANCED SPONTANEOUS EMISSION;CONTINUOUS-WAVE OPERATION;QUANTUM-WELL LASER;ROOM-TEMPERATURE;LIGHT EXTRACTION;BLUE;DESIGN;SINGLE;DIODES
Date:	2009
Issue Date:	2010-06-29 19:15:55 (UTC+8)
Publisher:	中央大學
Abstract:	This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaN-based VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7 degrees with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 x 10(-2) was measured.
Relation:	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Appears in Collections:	[Thin Film Technology Center] journal & Dissertation

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