Low resistance bilayer Nd/Al ohmic contacts on n-type GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28193

Title:	Low resistance bilayer Nd/Al ohmic contacts on n-type GaN
Authors:	Lee,CT;Yeh,MY;Tsai,CD;Lyu,YT
Contributors:	光電科學研究所
Keywords:	TRANSISTOR
Date:	1997
Issue Date:	2010-06-29 19:43:25 (UTC+8)
Publisher:	中央大學
Abstract:	A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type GaN(1x10(18) cm(-3)) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement, and then thermally annealed at temperatures ranging from 200 to 350 degrees C and from 500 to 650 degrees C using conventional thermal annealing (CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8x10(-6) Omega-cm(2) and 8x10(-6) Omega-cm(2) were obtained using Nd/Al metallization with CTA of 250 degrees C for 5 min and RTA of 600 degrees C for 30 s. Examination of the surface morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650 degrees C for rapid thermal annealing. Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation.
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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