Characterization of Nd-doped AlGaAs grown by liquid phase epitaxy

NCU Institutional Repository > 理學院 > 光電科學研究所 > 期刊論文 > Item 987654321/28210

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/28210

题名:	Characterization of Nd-doped AlGaAs grown by liquid phase epitaxy
作者:	Lee,CT;Yeh,JH;Lyu,YT
贡献者:	光電科學研究所
日期:	1996
上传时间:	2010-06-29 19:44:00 (UTC+8)
出版者:	中央大學
摘要:	Nd-doped AlGaAs epitaxial layers were grown by liquid phase epitaxy in a sliding boat system. The surface morphologies of the epitaxial layers grown with 0-0.4 wt% Nd are very smooth and mirror-like. However, when 0.6 wt% Nd is added, many defects and a fairly rough surface are observed. According to the experimental results of secondary ion mass spectroscopy, all the Nd, Ga, Al and As elements are uniformly distributed in the Nd-doped AlGaAs layers. Besides it was observed for the first time that the content of Al increases with increasing Nd. This phenomenon is also demonstrated by the blue shift of the photoluminescence spectra. Furthermore, by Hall and capacitance-voltage measurements, it can be concluded that the residual impurities in the Nd-doped AlGaAs layers can be effectively gettered by adding Nd dopant.
關聯:	JOURNAL OF CRYSTAL GROWTH
显示于类别:	[光電科學研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	566	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing