本研究在探討Al-doped zinc oxide(AZO)、Tin-doped indium oxide(ITO)、摻雜微量鈧之AZO及經300℃熱處理1小時後之AZO透明導電氧化薄膜等在3.5%NaCl溶液中，及不同pH之緩衝溶液中之電化學行為。研究方法採用開路電位量測、線性極化掃描、循環伏安法(CV)及交流阻抗頻譜測試(EIS)來探討它們的電化學現象，進而利用定電位還原反應在不同時間下來研究其表面之生成物。 上述之透明導電氧化薄膜在3.5%NaCl中，其抗腐蝕能力由大而小依序為：經300℃熱處理之AZO>ITO>Sc-doped AZO>AZO。摻雜微量鈧有利於AZO薄膜提升其抗腐蝕能力，當鈧摻雜量在0~1.7wt%時，其抗腐蝕性由大而小依序為：0.242wt%>0.134wt%>0.006wt%>0wt%，亦即鈧摻雜量愈高，其抗蝕能力愈強。 測量AZO透明導電薄膜在緩衝溶液下之開路電位，顯示在1500秒後才達穩定之電位。AZO薄膜在酸性(pH=4.10)及鹼性(pH =11.58)之緩衝溶液下，以不同掃瞄速率進行循環伏安(CV)電化學測試顯示：在50mV/s之掃瞄速率下，有明顯之氧化還原特性峰值。經300℃熱處理1小時之AZO薄膜在緩衝溶液中，其氧化還原特性電流皆比未熱處理之AZO低，顯示AZO薄膜在300℃熱處理後使AZO之活性下降，因而提升其抗腐蝕能力。定電位實驗有助於解析氧化及還原狀態之相關化學反應方程式。 The electrochemical behavior of Al-doped zinc oxide(AZO)、Tin-doped indium oxide(ITO)、Sc-doped AZO and AZO annealed at 300℃ for 1hr were immersed in 3.5%NaCl and in different buffer solutions varying with pH were investigated in this work. Electrochemical techniques such as measurement of open circuit potential, linear polarization, cyclic voltammograms, electrochemical impedance spectroscopy were employed. Reaction products on the surface of oxides under different potentials were examined for those produced on a variety of potentials in different duration. The corrosion resistance of difference oxide films to 3.5%NaCl solution decreases in the order: annealed 300℃ AZO>ITO>Sc-doped AZO>AZO. Sc-doped tends to in increase the corrosion resistance of the AZO thin films. The corrosion resistance to 3.5%NaCl for Sc-doped AZO decreases with decreasing the concentration of Sc-doped：0.242wt%>0.134wt%>0.006wt%>0wt%. The electrochemical behavior of AZO and the AZO anneal at 300℃ for 1h in various buffer solutions was studied using cyclic voltammetry under a scan rate of 50mV/s. The reduction current and characteristic oxidation current are lower in the annealed AZO then the usual AZO, this fact reflects that annealed AZO is more resistance to corrosion in buffer solutions.
