Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates

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题名:	Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates
作者:	Shieh,JL;Chang,MN;Cheng,YS;Chyi,JI
贡献者:	電機工程研究所
关键词:	MOLECULAR-BEAM EPITAXY;DEEP LEVELS;REDUCTION;LAYERS;SEMICONDUCTORS
日期:	1997
上传时间:	2010-06-29 20:21:12 (UTC+8)
出版者:	中央大學
摘要:	Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAl1-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively. (C) 1997 American Institute of Physics.
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[電機工程研究所] 期刊論文

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