Simulation of amorphous silicon thin-film transistor including adapted Gummel method

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29314

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29314

Title:	Simulation of amorphous silicon thin-film transistor including adapted Gummel method
Authors:	Tsai,YT;Huang,LC
Contributors:	電機工程研究所
Keywords:	MODEL
Date:	1997
Issue Date:	2010-06-29 20:21:34 (UTC+8)
Publisher:	中央大學
Abstract:	This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs.
Relation:	INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	430	View/Open

社群 sharing