The enhancement of electron barrier height by multistack multiquantum barrier structure is simulated using transfer matrix method. The validity and Feasibility of this concept is verified by the experimental results on GaAs-AlAs multistack multiquantum barriers. Based on the simulated results, both 0.78 and 1.3 mu m graded-index separate confinement heterostructure (GRIN-SCH) lasers with predicted enhanced carrier and optical confinements using graded multistack multiquantum barriers are designed. Lower threshold current, higher modulation bandwidth as well as higher characteristic temperature are expected for these lasers.
