Effects of finger width on large-area InGaAs MSM photodetectors

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29338

Title:	Effects of finger width on large-area InGaAs MSM photodetectors
Authors:	Yuang,RH;Chyi,JI
Contributors:	電機工程研究所
Keywords:	SEMICONDUCTOR-METAL PHOTODETECTORS
Date:	1996
Issue Date:	2010-06-29 20:22:09 (UTC+8)
Publisher:	中央大學
Abstract:	The authors show that the capacitance of the metal-semiconductor-metal photodetector call be minimised by using a very small or large finger width, with emphasis on the application for the large-area detector. Taking the quantum efficiency into account, the optimum sensitivity of the detector is obtained for the MSM-PD with very slim fingers.
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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