Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates

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题名:	Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates
作者:	Yang,MT;Chan,YJ;Shieh,JL;Chyi,JI
贡献者:	電機工程研究所
日期:	1996
上传时间:	2010-06-29 20:22:12 (UTC+8)
出版者:	中央大學
摘要:	An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density, This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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