GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors

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题名:	GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors
作者:	Chan,YJ;Wu,CS;Chyi,JI;Shieh,JL
贡献者:	電機工程研究所
关键词:	SUBSTRATE
日期:	1996
上传时间:	2010-06-29 20:22:15 (UTC+8)
出版者:	中央大學
摘要:	In0.29Al0.71As/In0.3Ga0.7As heterostructures grown on GaAs substrates with a step-graded metamorphic InxCa1-xAs buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In0.3Ga0.7As layer used as a buffer can be obtained. A 0.6-mu m-long gate HEMT based on this heterostructure demonstrated a g(m) of 230 mS/mm, an f(T) of 23 GHz, and an f(max) of 73 GHz. (C) 1996 John Wiley & Sons, Inc.
關聯:	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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