High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

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题名:	High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield
作者:	Yuang,RH;Chyi,JI;Lin,W;Tu,YK
贡献者:	電機工程研究所
关键词:	INDIUM-TIN-OXIDE;LOW DARK CURRENT;MSM PHOTODETECTORS;SCHOTTKY CONTACTS;PHOTODIODES;PERFORMANCE;GAAS
日期:	1996
上传时间:	2010-06-29 20:22:22 (UTC+8)
出版者:	中央大學
摘要:	High-performance In0.9Ga0.1 P-InP-InGaAs metal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 x 50 mu m(2) and different finger spacings of 2, 3 and 4 mu m, all exhibit high responsivities over 0.7 AW(-1) and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.
關聯:	OPTICAL AND QUANTUM ELECTRONICS
显示于类别:	[電機工程研究所] 期刊論文

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