Reactive-ion etching of WSix in CF4+O-2 and the associated damage in GaAs

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题名:	Reactive-ion etching of WSix in CF4+O-2 and the associated damage in GaAs
作者:	Chan,YJ;Su,CS;Sung,KT
贡献者:	電機工程研究所
关键词:	CYCLOTRON-RESONANCE SOURCE;PLASMA;TUNGSTEN
日期:	1996
上传时间:	2010-06-29 20:22:40 (UTC+8)
出版者:	中央大學
摘要:	Assessments of WSix reactive-ion etching in terms of the different CF4 to O-2 flow rate ratio were characterized. Based upon the evaluations from etching rates, side-wall profiles, surface roughness, and damages, we observed that the optimum etching condition was at a ratio of 10:1. The recovery of reactive-ion-etching-treated GaAs damaged layers through the thermal treatment was also investigated as a function of the annealing temperatures and duration times. These parameter evaluations were for the purpose of achieving a high performance GaAs metal-semiconductor field-effect transistor. (C) 1996 American Vacuum Society.
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
显示于类别:	[電機工程研究所] 期刊論文

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