Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping

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题名:	Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping
作者:	Chyi,JI;Chien,YJ;Yuang,RH;Shieh,JL;Pan,JW;Chen,JS
贡献者:	電機工程研究所
关键词:	SEMICONDUCTOR-METAL PHOTODETECTORS
日期:	1996
上传时间:	2010-06-29 20:22:41 (UTC+8)
出版者:	中央大學
摘要:	The temporal responses of the undoped, n-type, and p-type delta-doped GaAs metal-semiconductor-metal photodetectors were systematically studied. The full-width at half-maximum of the temporal response is significantly improved at low bias for the F-doped detectors compared to the conventional undoped one. The p-type delta-doped detector exhibits the smallest fall-time, and hence the highest bandwidth, because the induced electric field in the absorption region facilitates the transport of the photogenerated holes. In addition, the p-type delta-doped detector also gives the highest peak amplitude of the temporal response. Two dimensional simulation on the internal electrical field distribution in the detectors is consistent with the experimental results.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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