INGAP/GAAS MULTIQUANTUM BARRIER STRUCTURES PREPARED BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

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题名:	INGAP/GAAS MULTIQUANTUM BARRIER STRUCTURES PREPARED BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
作者:	SHIAO,HP;WANG,CY;TU,YK;LIN,W;LEE,CT
贡献者:	電機工程研究所
日期:	1995
上传时间:	2010-06-29 20:23:26 (UTC+8)
出版者:	中央大學
摘要:	An InGaP/GaAs superlattice with multiquantum barrier (MQB) effect was demonstrated by low-pressure organometallic vapor phase epitaxial technique. Two types of n-i-n tunnel diodes with either InGaP/GaAs MQB barrier or bulk InGaP barrier were fabricated for comparison. The current-voltage characteristics show that the turn on voltage in the MQB barrier sample is higher than that in the bulk barrier sample. The experimentally measured effective barrier height of the MQB is about 1.8 times that of the bulk barrier, and this value is in quite good agreement with the value, 1.93, theoretically calculated by the transfer matrix method.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程研究所] 期刊論文

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