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http://ir.lib.ncu.edu.tw/handle/987654321/29407
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題名: | AN EFFICIENT ANALYTICAL MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON |
作者: | TSAI,YT;HONG,KD;YUAN,YL |
貢獻者: | 電機工程研究所 |
關鍵詞: | THIN-FILM TRANSISTORS;SIMULATIONS |
日期: | 1994 |
上傳時間: | 2010-06-29 20:23:59 (UTC+8) |
出版者: | 中央大學 |
摘要: | We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors. |
關聯: | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS |
顯示於類別: | [電機工程研究所] 期刊論文
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