Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/ In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 +/- 0.05eV which corresponds to a conduction band offset to bandgap difference ratio of similar to 0.66. The comparison between experimental and theoretical results is presented.
