LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29422

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题名:	LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS
作者:	CHYI,JI;WEI,TS;HONG,JW;LIN,W;TU,YK
贡献者:	電機工程研究所
关键词:	HIGH-PERFORMANCE;INP
日期:	1994
上传时间:	2010-06-29 20:24:23 (UTC+8)
出版者:	中央大學
摘要:	InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55 mum wavelength varies between 0.21 and 0.43 A/W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44 muA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.
關聯:	ELECTRONICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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