UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS

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Title:	UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS
Authors:	HWANG,HP;SHIEH,JL;LIN,RM;CHYI,JI;TU,SL;PENG,CK;YANG,SJ
Contributors:	電機工程研究所
Keywords:	TUNNELING DIODES;BARRIERS
Date:	1994
Issue Date:	2010-06-29 20:24:39 (UTC+8)
Publisher:	中央大學
Abstract:	The authors investigate the current-voltage characteristics Of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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